23 May 2017 Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition
Anuja De Silva, Indira Seshadri, Kisup Chung, Abraham Arceo, Luciana Meli, Brock Mendoza, Yasir Sulehria, Yiping Yao, Madhana Sunder, Hoa Truong, Shravan Matham, Ruqiang Bao, Heng Wu, Nelson M. Felix, Sivananda Kanakasabapathy
Author Affiliations +
Abstract
With the increasing prevalence of complex device integration schemes, trilayer patterning with a solvent strippable hardmask can have a variety of applications. Spin-on metal hardmasks have been the key enabler for selective removal through wet strip when active areas need to be protected from dry etch damage. As spin-on metal hardmasks require a dedicated track to prevent metal contamination and are limited in their ability to scale down thickness without compromising on defectivity, there has been a need for a deposited hardmask solution. Modulation of film composition through deposition conditions enables a method to create TiO2 films with wet etch tunability. This paper presents a systematic study on development and characterization of plasma-enhanced atomic layer deposited (PEALD) TiO2-based hardmasks for patterning applications. We demonstrate lithographic process window, pattern profile, and defectivity evaluation for a trilayer scheme patterned with PEALD-based TiO2 hardmask and its performance under dry and wet strip conditions. Comparable structural and electrical performance is shown for a deposited versus a spin-on metal hardmask.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2017/$25.00 © 2017 SPIE
Anuja De Silva, Indira Seshadri, Kisup Chung, Abraham Arceo, Luciana Meli, Brock Mendoza, Yasir Sulehria, Yiping Yao, Madhana Sunder, Hoa Truong, Shravan Matham, Ruqiang Bao, Heng Wu, Nelson M. Felix, and Sivananda Kanakasabapathy "Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(2), 023504 (23 May 2017). https://doi.org/10.1117/1.JMM.16.2.023504
Received: 5 March 2017; Accepted: 28 April 2017; Published: 23 May 2017
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KEYWORDS
Titanium dioxide

Metals

Atomic layer deposition

Etching

Optical lithography

Contamination

Dry etching

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