Special Section Guest Editorial: 3D Semiconductor Metrology

Ndubuisi George Orji; Qinghuang Lin

doi:10.1117/1.JMM.22.3.031201

9 August 2023 Special Section Guest Editorial: 3D Semiconductor Metrology

Ndubuisi George Orji, Qinghuang Lin

Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 22, Issue 3, 031201 (August 2023). https://doi.org/10.1117/1.JMM.22.3.031201

Abstract

Guest editors Ndubuisi George Orji and Qinghuang Lin introduce the Special Section on 3D Semiconductor Metrology.

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Ndubuisi George Orji and Qinghuang Lin "Special Section Guest Editorial: 3D Semiconductor Metrology," Journal of Micro/Nanopatterning, Materials, and Metrology 22(3), 031201 (9 August 2023). https://doi.org/10.1117/1.JMM.22.3.031201

Published: 9 August 2023

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KEYWORDS

3D metrology

Metrology

Semiconductors

3D equipment

Transistors

Fin field effect transistors

Gallium arsenide

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