Cunzhi Sun, Weiwei Cai, Rongdun Hong, Jiafa Cai, Zhengyun Wu
Journal of Nanophotonics, Vol. 13, Issue 01, 016013, (March 2019) https://doi.org/10.1117/1.JNP.13.016013
TOPICS: Silicon carbide, Graphene, Resistance, Electrodes, Photodetectors, Raman spectroscopy, Chemical species, Palladium, Silicon, Hydrogen
By utilizing a Joule heating decomposition method, hydrogenated multilayer graphene (MLG) has been grown on the surface of a semi-insulation 4H-SiC epitaxial layer. The Raman spectra have indicated that the sublimation speed of Si atoms, which corresponds positively to the Joule heat, had great influence on the hydrogenation degree and the layer number of the MLG. Then, a graphene/4H-SiC/graphene photodetector was fabricated and studied, showing hydrogenation-dependent dark current and photocurrent, depicting the influence of hydrogenation degree and the layer number on the Schottky barrier high (varying from 0.59 to 0.99 eV). Moreover, the sheet resistance of MLG and the specific contact resistance of graphene/Cr/Au came out to be ∼3.2 kΩ / sq and 7.5 × 10 − 3 Ω · cm2.