Haitao Peng, Weihai Sun, Yunlong Li, Weibo Yan, Pingrong Yu, Huanping Zhou, Zuqiang Bian, Chunhui Huang
Journal of Photonics for Energy, Vol. 6, Issue 02, 022002, (April 2016) https://doi.org/10.1117/1.JPE.6.022002
TOPICS: Perovskite, Cadmium sulfide, Solar cells, Cadmium, Interfaces, Electron transport, Solar energy, Resistance, Zinc oxide, Quantum efficiency
Planar heterojunction perovskite solar cell is one of the most competitive photovoltaic technologies, while charge transport materials play a crucial role. We successfully demonstrated an effective electron transport material, namely chemical bath deposited cadmium sulphide (CdS) film under low temperature, in perovskite-based solar cells. Power conversion efficiency of 16.1% has been achieved, which is comparable to that of devices based on TiO2 film prepared via low-temperature processes. Electronic impedance spectra reveal that the CdS-based device presents a higher recombination resistance than TiO2-based devices, which reduces carrier recombination and increases the open circuit voltage. The interface between CdS and perovskite was characterized with improved characteristics when compared to TiO2, e.g., efficient carrier extraction and reduced surface defect–associated degradation in the devices, which help to alleviate anomalous hysteresis and long-term instability. Furthermore, the entire device was fabricated via solution process with a processing temperature below 100°C, suggesting a promising method of further development of perovskite solar cells and commercial manufacturing.