Luminescent coupling effect in wafer-bonded III-V on silicon multijunction solar cells

Bernice Mae F. Yu Jeco; Elias Veinberg-Vidal; Laura Vauche; Katsuhisa Yoshida; Ryo Tamaki; Nazmul Ahsan; Yoshitaka Okada

doi:10.1117/1.JPE.9.015504

29 March 2019 Luminescent coupling effect in wafer-bonded III-V on silicon multijunction solar cells

Bernice Mae F. Yu Jeco, Elias Veinberg-Vidal, Laura Vauche, Katsuhisa Yoshida, Ryo Tamaki, Nazmul Ahsan, Yoshitaka Okada

Author Affiliations +

Journal of Photonics for Energy, Vol. 9, Issue 1, 015504 (March 2019). https://doi.org/10.1117/1.JPE.9.015504

Abstract

Strong luminescent coupling (LC) effect reduces current mismatch in III-V-based multijunction solar cells and consequently improves their power conversion efficiency. The LC current production in the Si bottom cell of InGaP/AlGaAs//Si triple junction solar cells having different sizes was investigated to determine the cell area dependence of LC effect. This was probed through laser beam-induced current (LBIC) mapping. The areal mapping was then assessed by obtaining the absolute difference between the quantum efficiencies calculated from the fitted LBIC map and simulated LC current considering uniform distribution using a quasi-two-dimensional electro-optical prediction model. At 9.17 suns concentration difference between the AlGaAs middle cell and the current-limiting Si bottom cell, the absolute LC quantum efficiency differences ranged between 0.16% and 1.68% in various cell sizes, which indicate potential current production increase if the LC current is made uniform.

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Bernice Mae F. Yu Jeco, Elias Veinberg-Vidal, Laura Vauche, Katsuhisa Yoshida, Ryo Tamaki, Nazmul Ahsan, and Yoshitaka Okada "Luminescent coupling effect in wafer-bonded III-V on silicon multijunction solar cells," Journal of Photonics for Energy 9(1), 015504 (29 March 2019). https://doi.org/10.1117/1.JPE.9.015504

Received: 10 September 2018; Accepted: 11 March 2019; Published: 29 March 2019

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