Infrared Charge Transfer Devices: The Silicon Approach

Richard D. Nelson

doi:10.1117/12.7972144

1 June 1977 Infrared Charge Transfer Devices: The Silicon Approach

Richard D. Nelson

Author Affiliations +

Optical Engineering, Vol. 16, Issue 3, 163275 (June 1977). https://doi.org/10.1117/12.7972144

Abstract

Possible system applications of Infrared Charge Transfer Devices are reviewed. It is found that this device technology can have a very significant systems impact. Analyses are performed to calculate the quantum efficiency, quantum yield, frequency response, photoconductive gain, operating temperature, noise and the distinction between longitudinal and transverse bias configurations of silicon detectors. Tables of silicon detector properties are included. Approaches to the interface circuitry which couples the detectors and the CTD multiplexer are examined. Examples of existing low background and high background IRCTD detector arrays are given.

Citation Download Citation

Richard D. Nelson "Infrared Charge Transfer Devices: The Silicon Approach," Optical Engineering 16(3), 163275 (1 June 1977). https://doi.org/10.1117/12.7972144

Published: 1 June 1977

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available