Deep-Level Transient Spectroscopy: Characterization And Identification Of Electronic Defects

N. M. Johnson

doi:10.1117/12.7973888

1 May 1986 Deep-Level Transient Spectroscopy: Characterization And Identification Of Electronic Defects

N. M. Johnson

Author Affiliations +

Optical Engineering, Vol. 25, Issue 5, 255698 (May 1986). https://doi.org/10.1117/12.7973888

Abstract

This paper presents an overview of the application of deep-level transient spectroscopy (DLTS) for characterizing and identifying electronic defects in semiconductors. After a review of general principles, the range of defect problems that has been studied by DLTS is illustrated with results from crystalline semiconductors, semiconductor-insulator interfaces, and amorphous semiconductors.

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N. M. Johnson "Deep-Level Transient Spectroscopy: Characterization And Identification Of Electronic Defects," Optical Engineering 25(5), 255698 (1 May 1986). https://doi.org/10.1117/12.7973888

Published: 1 May 1986

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