Electroluminescent devices with different insulator/semiconductor      interfaces prepared by radio-frequency sputtering

Chin-Tsar Hsu; Yan-Kuin Su; Meiso Yokoyama

doi:10.1117/12.143991

1 August 1993 Electroluminescent devices with different insulator/semiconductor interfaces prepared by radio-frequency sputtering

Chin-Tsar Hsu, Yan-Kuin Su, Meiso Yokoyama

Author Affiliations +

Optical Engineering, Vol. 32, Issue 8, (August 1993). https://doi.org/10.1117/12.143991

Abstract

To evaluate the interface properties of a thin-film electroluminescent (EL) stacked-layer insulator structure, four kinds of samples with different insulating layers are prepared. We found that by using insulating layers with a low resistivity and a high dielectric constant adjacent to the active layer, we can greatly improve the emission characteristics. We also found that the EL device with a glass/indium tin oxide/BaTiO₃/ZnS:TbF₃/HfO₂/Ta₂O₅/HfO₂/Al structure exhibited higher brightness and higher efficiency than the other devices. The highest luminous efficiency η and brightness of 0.9 lm/W and 1000 cd/m² were obtained, respectively, by applying a 1-kHz sinusoidal wave voltage.

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Chin-Tsar Hsu, Yan-Kuin Su, and Meiso Yokoyama "Electroluminescent devices with different insulator/semiconductor interfaces prepared by radio-frequency sputtering," Optical Engineering 32(8), (1 August 1993). https://doi.org/10.1117/12.143991

Published: 1 August 1993

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