Comparison between super low ionization ratio and reach through avalanche photodiode structures

Tamer F. Refaat; Gary E. Halama; Russell J. De Young

doi:10.1117/1.1308925

1 October 2000 Comparison between super low ionization ratio and reach through avalanche photodiode structures

Tamer F. Refaat, Gary E. Halama, Russell J. De Young

Optical Engineering, Vol. 39, Issue 10, (October 2000). https://doi.org/10.1117/1.1308925

Avalanche photodiodes (APD) are solid state quantum detectors suitable for low level light detection in the visible and near infrared regions. These devices are commercially available from many manufacturers and are fabricated using several different solid state structures. In this paper a comparison between the well developed reach through structure (RTS) aPd and the relatively newer super low ionization ratio, k, (SLIK) APD structure will be discussed. The comparison is based on the experimental characterization of two APDs with these structures. The characterization setup and experiments will be described which include the calibration of the APDs, temperature response, bias voltage response, and noise measurements including noise-equivalent-power and detectivity D*. For this comparison the selected RTS APD is the EG&G C30955E, currently used by the lidar atmospheric sensing experiment (LASE) instrument. The selected SLIK ApD is the EG&G C30649E, which is proposed for LASE development. The characterization experiments where done in order to develop an advanced atmospheric water vapor differential absorption lidar detection system.

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Tamer F. Refaat, Gary E. Halama, and Russell J. De Young "Comparison between super low ionization ratio and reach through avalanche photodiode structures," Optical Engineering 39(10), (1 October 2000). https://doi.org/10.1117/1.1308925

Published: 1 October 2000

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