Empirical dark current modeling for complementary metal oxide          semiconductor active pixel sensor

Igor Shcherback; Alexander A. Belenky; Orly Yadid-Pecht

doi:10.1117/1.1475995

1 June 2002 Empirical dark current modeling for complementary metal oxide semiconductor active pixel sensor

Igor Shcherback, Alexander A. Belenky, Orly Yadid-Pecht

Optical Engineering, Vol. 41, Issue 6, (June 2002). https://doi.org/10.1117/1.1475995

We present an empirical dark current model for CMOS active pixel sensors (APSs). The model is based on experimental data taken of a 256 x 256 APS chip fabricated via HP in a standard 0.5-?m CMOS technology process. This quantitative model determines the pixel dark current dependence on two contributing factors: the "ideal" dark current determined by the photodiode junction, introduced here as a stable shot noise influence of the device active area, and a leakage current due to the device active area shape, i.e., the number of corners present in the photodiode and their angles. This part is introduced as a process- induced structure stress effect.

©(2002) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Igor Shcherback, Alexander A. Belenky, and Orly Yadid-Pecht "Empirical dark current modeling for complementary metal oxide semiconductor active pixel sensor," Optical Engineering 41(6), (1 June 2002). https://doi.org/10.1117/1.1475995

Published: 1 June 2002

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