Influence of chlorine on etched sidewalls in chemically assisted ion beam etching with SU-8 as mask

Lin Pang; Chiagho Tsai; Yeshaiahu Fainman

doi:10.1117/1.1923007

1 June 2005 Influence of chlorine on etched sidewalls in chemically assisted ion beam etching with SU-8 as mask

Lin Pang, Chiagho Tsai, Yeshaiahu Fainman

Author Affiliations +

Optical Engineering, Vol. 44, Issue 6, 063401 (June 2005). https://doi.org/10.1117/1.1923007

Abstract

A thin layer of SU-8 submicron pattern produced by holographic lithography is used as the dry etch mask in a chemically assisted ion beam etching (CAIBE) system. The effect of the chlorine gas flow rate on etched sidewalls is investigated; by matching the lateral etch rate and the deposition rate, etching selectivity of up to 7:1 is achieved, rendering smooth vertical sidewalls and damage-free upper portions for the etched structure.

©(2005) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Lin Pang, Chiagho Tsai, and Yeshaiahu Fainman "Influence of chlorine on etched sidewalls in chemically assisted ion beam etching with SU-8 as mask," Optical Engineering 44(6), 063401 (1 June 2005). https://doi.org/10.1117/1.1923007

Published: 1 June 2005

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