1 November 2005 Beveled sidewall formation and its effect on the light output of a GaInN multiquantum well light-emitting diode with sapphire substrate
Jung-Tsung Hsu, W. Y. Yeh, ChangCheng Chuo, Jenq-Dar Tsay, C. S. Huang, C. Y. Lin
Author Affiliations +
Abstract
In this research, experiments and optical simulations are carried out to study the effect of beveled sidewalls and geometric shapes on the light extraction efficiency of a GaN light-emitting diode (LED) with sapphire substrate. In addition to the conventional rectangular chips, hexagonal chips are experimentally processed for the first time on a novel island-like GaN substrate, on which the beveled sidewalls are naturally formed at each island during GaN epitaxial growth on a sapphire original substrate by hydride vapor phase epitaxy (HVPE) technology. The results from our simulations and experiments show that the output power of a LED with beveled sidewalls is about two times that of a normal LED, and those from hexagonal chips are always better than those from conventional rectangular chips.
©(2005) Society of Photo-Optical Instrumentation Engineers (SPIE)
Jung-Tsung Hsu, W. Y. Yeh, ChangCheng Chuo, Jenq-Dar Tsay, C. S. Huang, and C. Y. Lin "Beveled sidewall formation and its effect on the light output of a GaInN multiquantum well light-emitting diode with sapphire substrate," Optical Engineering 44(11), 111304 (1 November 2005). https://doi.org/10.1117/1.2131049
Published: 1 November 2005
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light emitting diodes

Gallium nitride

Sapphire

Monte Carlo methods

Absorption

Optical simulations

External quantum efficiency

RELATED CONTENT


Back to Top