Modeling of the temperature-dependent spectral response of In1–GaSb infrared photodetectors

Juan A. González-Cuevas; Tamer F. Refaat; M. Nurul Abedin; Hani E. Elsayed-Ali

doi:10.1117/1.2192772

1 April 2006 Modeling of the temperature-dependent spectral response of In_1–χGa_χSb infrared photodetectors

Juan A. González-Cuevas, Tamer F. Refaat, M. Nurul Abedin, Hani E. Elsayed-Ali

Author Affiliations +

Optical Engineering, Vol. 45, Issue 4, 044001 (April 2006). https://doi.org/10.1117/1.2192772

Abstract

A model of the spectral responsivity of In_1–χGa_χSb p-n junction infrared photodetectors is developed. This model is based on calculations of the photogenerated and diffusion currents in the device. Expressions for the carrier mobilities, absorption coefficient, and normal-incidence reflectivity as a function of temperature are derived from extensions made to Adachi and Caughey-Thomas models. Contributions from the Auger recombination mechanism, which increase with a rise in temperature, are also considered. The responsivity is evaluated for different doping levels, diffusion depths, operating temperatures, and photon energies. Parameters calculated from the model are compared with available experimental data, and good agreement is obtained. These theoretical calculations help us to better understand the electro-optical behavior of In_1–χGa_χSb photodetectors, and can be utilized for performance enhancement through optimization of the device structure.

©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Juan A. González-Cuevas, Tamer F. Refaat, M. Nurul Abedin, and Hani E. Elsayed-Ali "Modeling of the temperature-dependent spectral response of In_1–χGa_χSb infrared photodetectors," Optical Engineering 45(4), 044001 (1 April 2006). https://doi.org/10.1117/1.2192772

Published: 1 April 2006

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