Microstructure- and composition-related characteristics of LaF3 thin films at 193 nm

Ming-Chung Liu; Cheng-Chung Lee; Masaaki Kaneko; Kazuhide Nakahira; Yuuichi Takano

doi:10.1117/1.2227001

1 August 2006 Microstructure- and composition-related characteristics of LaF₃ thin films at 193 nm

Ming-Chung Liu, Cheng-Chung Lee, Masaaki Kaneko, Kazuhide Nakahira, Yuuichi Takano

Author Affiliations +

Optical Engineering, Vol. 45, Issue 8, 083801 (August 2006). https://doi.org/10.1117/1.2227001

Abstract

The characteristics of lanthanum fluoride (LaF₃) thin films deposited with a resistive heating (RH) boat and by e-beam gun evaporation at different substrate temperatures have been studied. The characteristics of the deposited films, including optical properties, stress, and laser-induced damage threshold (LIDT), were related to the microstructure as well as the stoichiometry of the film. The films exhibit obvious different characteristics between these two processes at various substrate temperatures. It was found that optical properties, stress, and LIDT were affected by the microstructure and composition of the films. To obtain a high value of the LIDT and good optical properties, LaF₃ thin films should be deposited by the RH process at a substrate temperature of 300 °C.

©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Ming-Chung Liu, Cheng-Chung Lee, Masaaki Kaneko, Kazuhide Nakahira, and Yuuichi Takano "Microstructure- and composition-related characteristics of LaF₃ thin films at 193 nm," Optical Engineering 45(8), 083801 (1 August 2006). https://doi.org/10.1117/1.2227001

Published: 1 August 2006

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