Solar-blind photodetectors based on polycrystalline MgZnO thin films

Gaoming Li; Jingwen Zhang; Ying Liu; Kunfeng Zhang

doi:10.1117/1.3643722

1 November 2011 Solar-blind photodetectors based on polycrystalline MgZnO thin films

Gaoming Li, Jingwen Zhang, Ying Liu, Kunfeng Zhang

Author Affiliations +

Optical Engineering, Vol. 50, Issue 11, 113801 (November 2011). https://doi.org/10.1117/1.3643722

Abstract

Photoconductive metal-semiconductor-metal ultraviolet detectors were fabricated based on the polycrystalline MgZnO films, which were grown on SiO₂/Si substrates by radio frequency magnetron sputtering. The peak response of the detector was at 300 nm, which lay in the solar-blind spectrum range (220 to 300 nm). And the peak responsivity was 34.02 A/W. The ratio of I_ph/I_d was as high as 2659.7 at 5 V bias under a low pressure Hg lamp illumination. And a rise time of 44.48 μs (90%) and fall time of 120.2 ms (10%) of the detector were acquired.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Gaoming Li, Jingwen Zhang, Ying Liu, and Kunfeng Zhang "Solar-blind photodetectors based on polycrystalline MgZnO thin films," Optical Engineering 50(11), 113801 (1 November 2011). https://doi.org/10.1117/1.3643722

Published: 1 November 2011

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