9 February 2012 Experiments and analysis on Joule heating effect in field-assisted ion diffusion
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Abstract
Due to the Joule heating effect induced by the use of an assisting electric field, glass wafer temperature is experimentally found to increase synchronically with the flow of current during the process of field-assisted ion diffusion. A theoretical analysis demonstrates that the amplitude of the glass wafer temperature increase is dictated by competition between two factors, heat generation and heat dissipation. Heat generation and heat dissipation both become stronger as the glass wafer temperature increases. Studies have shown that the Joule heating effect can influence the waveguide manufacturing process profoundly, including aspects such as the stability of ion diffusion, theoretical modeling of the ion-diffusion process, and waveguide depth uniformity over the glass wafer.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2012/$25.00 © 2012 SPIE
Yinlei Hao, Bin Zheng, Weiwei Zheng, Jianyi Yang, Xiaoqing Jiang, Qiang Zhou, Minghua Wang, and Hongjian Wang "Experiments and analysis on Joule heating effect in field-assisted ion diffusion," Optical Engineering 51(1), 014601 (9 February 2012). https://doi.org/10.1117/1.OE.51.1.014601
Published: 9 February 2012
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Glasses

Semiconducting wafers

Ions

Diffusion

Waveguides

Distributed interactive simulations

Temperature metrology

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