20 June 2014 Electro-optic modulator based gate transient suppression for sine-wave gated InGaAs/InP single photon avalanche photodiode
Yixin Zhang, Xuping Zhang, Yuanlei Shi, Zhoufeng Ying, Shun Wang
Author Affiliations +
Abstract
Capacitive gate transient noise has been problematic for the high-speed single photon avalanche photodiode (SPAD), especially when the operating frequency extends to the gigahertz level. We proposed an electro-optic modulator based gate transient noise suppression method for sine-wave gated InGaAs/InP SPAD. With the modulator, gate transient is up-converted to its higher-order harmonics that can be easily removed by low pass filtering. The proposed method enables online tuning of the operating rate without modification of the hardware setup. At 250 K, detection efficiency of 14.7% was obtained with 4.8×10 −6   per gate dark count and 3.6% after-pulse probabilities for 1550-nm optical signal under 1-GHz gating frequency. Experimental results have shown that the performance of the detector can be maintained within a designated frequency range from 0.97 to 1.03 GHz, which is quite suitable for practical high-speed SPAD applications operated around the gigahertz level.
© 2014 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2014/$25.00 © 2014 SPIE
Yixin Zhang, Xuping Zhang, Yuanlei Shi, Zhoufeng Ying, and Shun Wang "Electro-optic modulator based gate transient suppression for sine-wave gated InGaAs/InP single photon avalanche photodiode," Optical Engineering 53(6), 067102 (20 June 2014). https://doi.org/10.1117/1.OE.53.6.067102
Published: 20 June 2014
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Modulation

Electrooptic modulators

Signal detection

Seaborgium

Single photon

Avalanche photodiodes

Modulators

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