Thick detection zone single-photon avalanche diode fabricated in 0.35  μm complementary metal-oxide semiconductors

Bernhard Steindl; Reinhard Enne; Horst Zimmermann

doi:10.1117/1.OE.54.5.050503

22 May 2015 Thick detection zone single-photon avalanche diode fabricated in 0.35 μm complementary metal-oxide semiconductors

Bernhard Steindl, Reinhard Enne, Horst Zimmermann

Author Affiliations +

Optical Engineering, Vol. 54, Issue 5, 050503 (May 2015). https://doi.org/10.1117/1.OE.54.5.050503

Abstract

An avalanche photodiode (APD) fabricated in 0.35 μm high-voltage complementary metal-oxide semiconductor (CMOS) technology, which was originally optimized for linear mode applications, is characterized in Geiger mode operation. This work shows that the used design concept is also suitable for single-photon detection applications and achieves a photon detection efficiency of 22.1% at 785 nm due to a thick detection zone and 3.5 V excess bias. At this operation point, the single-photon APD achieves good results regarding afterpulsing probability (3.4%) and dark count rate (46 kHz) with respect to the large active diameter of 86 μm.

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Bernhard Steindl, Reinhard Enne, and Horst Zimmermann "Thick detection zone single-photon avalanche diode fabricated in 0.35 μm complementary metal-oxide semiconductors," Optical Engineering 54(5), 050503 (22 May 2015). https://doi.org/10.1117/1.OE.54.5.050503

Published: 22 May 2015

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