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5 November 2015 Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor
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Abstract
We present the first optoelectronic integrated bipolar complementary metal oxide semiconductor (BiCMOS) receiver chip with an avalanche photodiode (APD). A large 200-μm-diameter APD connected to a high-speed transimpedance amplifier designed for a 2-Gbps optical wireless communication system is proposed. The complete chip was realized in a 0.35-μm silicon BiCMOS technology. Due to the thick intrinsic zone and multiplication gain, the responsivity of the APD reaches a value of up to 120  A/W for a wavelength of 675 nm. Furthermore, the capacitance of the APD is <500  fF for reverse bias voltages above 18 V. The receiver has a supply voltage of 3.3 V with a current consumption of 76 mA. The delivered 50-Ω single-ended output swing is 550  mVpp and the overall transimpedance is 260  kΩ with 1.02-GHz bandwidth. The achieved data rate is 2 Gbps with a sensitivity of −30.3  dBm at a bit error rate <10−9.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2015/$25.00 © 2015 SPIE
Tomislav Jukić, Bernhard Steindl, Reinhard Enne, and Horst Zimmermann "Monolithically integrated avalanche photodiode receiver in 0.35 μm bipolar complementary metal oxide semiconductor," Optical Engineering 54(11), 110502 (5 November 2015). https://doi.org/10.1117/1.OE.54.11.110502
Published: 5 November 2015
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