Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

Semyon Papernov; Alexei A. Kozlov; Lars Jensen; James B. Oliver; Stefan Günster; Heinrich Mädebach; Chris Smith; Detlev Ristau

doi:10.1117/1.OE.56.1.011004

15 July 2016 Role of HfO₂/SiO₂ thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

Semyon Papernov, Alexei A. Kozlov, Lars Jensen, James B. Oliver, Stefan Günster, Heinrich Mädebach, Chris Smith, Detlev Ristau

Author Affiliations +

Funded by: Department of Energy National Nuclear Security Administration, German Federal Ministry of Education & Research

Optical Engineering, Vol. 56, Issue 1, 011004 (July 2016). https://doi.org/10.1117/1.OE.56.1.011004

Abstract

The role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO₂ and SiO₂ thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO₂ single-layer film and for a film containing seven narrow HfO₂ layers separated by SiO₂ layers. The seven-layer film was designed to have a total optical thickness of HfO₂ layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO₂ film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO₂ film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO₂ film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO₂ and SiO₂ materials.

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Semyon Papernov, Alexei A. Kozlov, Lars Jensen, James B. Oliver, Stefan Günster, Heinrich Mädebach, Chris Smith, and Detlev Ristau "Role of HfO₂/SiO₂ thin-film interfaces in near-ultraviolet absorption and pulsed laser damage," Optical Engineering 56(1), 011004 (15 July 2016). https://doi.org/10.1117/1.OE.56.1.011004

Published: 15 July 2016

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