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24 August 2017 Diode-pumped passively Q-switched Nd : GdNbO4 laser with Cr4+ : YAG saturable absorber
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Abstract
Diode-pumped passively Q-switched laser operation of a Nd:GdNbO4 crystal at 1066 nm using Cr4+:YAG as a saturable absorber was demonstrated for the first time. Using two different Cr4+:YAG crystals with initial transmission of 95% and 90% as the saturable absorber for Q-switching, a maximum average output power of 0.50 and 0.41 W was obtained at a pulse repetition frequency of 28.7 and 17.8 KHz, respectively. The shortest pulse width of 23 ns, the largest pulse energy of 22.7  μJ, and the highest peak power of 974.1 W were obtained when the Cr4+:YAG crystal was used with an initial transmission of 90%. The shortest pulse width of 33.3 ns, the largest pulse energy of 17.3  μJ, and the highest peak power of 519 W were obtained when the Cr4+:YAG crystal was used with an initial transmission of 95%. All the results indicate that the Nd:GdNbO4 crystal is a material suitable for diode-pumped passively Q-switched lasers.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2017/$25.00 © 2017 SPIE
Shoujun Ding, Xiaotao Yang, Qingli Zhang, Wenpeng Liu, Jianqiao Luo, Guihua Sun, Yuefei Ma, and Dunlu Sun "Diode-pumped passively Q-switched Nd : GdNbO4 laser with Cr4+ : YAG saturable absorber," Optical Engineering 56(8), 086111 (24 August 2017). https://doi.org/10.1117/1.OE.56.8.086111
Received: 19 June 2017; Accepted: 1 August 2017; Published: 24 August 2017
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