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27 February 2018 Electrical and optical performance of midwave infrared InAsSb heterostructure detectors
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We investigate the high-operating temperature performance of InAsSb/AlSb heterostructure detectors with cutoff wavelengths near 5  μm at 230 K. The devices have been fabricated with different types of absorbing layers: nominally undoped absorber (with n-type conductivity), and both n- and p-type doped. The results show that the device performance strongly depends on absorber layer type. Generally, the p-type absorber provides higher values of current responsivity than the n-type absorber, but at the same time also higher values of dark current. The device with the nominally undoped absorbing layer shows moderate values of both current responsivity and dark current. Resulting detectivities D  *   of nonimmersed devices vary from 2  ×  109 to 5  ×  109  cm Hz1/2 W  ?  1 at 230 K, which is easily achievable with a two-stage thermoelectric cooler. Optical immersion increases the detectivity up to 5  ×  1010  cm Hz1/2 W  ?  1.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2018/$25.00 © 2018 SPIE
Emilia Gomółka, Małgorzata Kopytko, Olga K. Markowska, Krystian Michalczewski, Łukasz Kubiszyn, Artur Kębłowski, Jarosław Jureńczyk, Waldemar Gawron, Piotr Marcin Martyniuk, Józef F. Piotrowski, Jarosław Rutkowski, and Antoni Rogalski "Electrical and optical performance of midwave infrared InAsSb heterostructure detectors," Optical Engineering 57(2), 027107 (27 February 2018).
Received: 23 October 2017; Accepted: 30 January 2018; Published: 27 February 2018

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