Translator Disclaimer
10 April 2019 High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability
Author Affiliations +
Abstract
A fully integrated single-photon avalanche diode (SPAD) using a high-voltage quenching circuit fabricated in a 0.35-μm CMOS process is proposed. The quenching circuit features a quenching voltage of 9.9 V, which is three times the nominal supply voltage to increase the photon detection probability (PDP). To prove the quenching performance, the circuit has been integrated together with a large-area SPAD having an active diameter of 90  μm. Experimental verification shows a maximum PDP of 67.8% at 9.9 V excess bias at a wavelength of 642 nm.
© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2019/$25.00 © 2019 SPIE
Alija Dervić, Bernhard Steindl, Michael Hofbauer, and Horst Zimmermann "High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability," Optical Engineering 58(4), 040501 (10 April 2019). https://doi.org/10.1117/1.OE.58.4.040501
Received: 19 December 2018; Accepted: 22 March 2019; Published: 10 April 2019
JOURNAL ARTICLE
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top