Dr. Adam R. Pawloski Profile

Dr. Adam R. Pawloski

Scientist at Affymetrix Inc

SPIE Involvement:

Author

Publications (23)

Proceedings Article | 11 April 2007 Paper

Paper

Line-edge roughness in 193-nm resists: lithographic aspects and etch transfer

Thomas Wallow, Alden Acheta, Yuansheng Ma, Adam Pawloski, Scott Bell, Brandon Ward, Cyrus Tabery, Bruno La Fontaine, Ryoung-han Kim, Sarah McGowan, Harry Levinson

Proceedings Volume 6519, 651919 (2007) https://doi.org/10.1117/12.712319

KEYWORDS: Line edge roughness, Etching, Photoresist materials, Spatial frequencies, Lithography, Smoothing, Image processing, Critical dimension metrology, Semiconducting wafers, Photoresist processing

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SPIE Journal Paper | 1 April 2006

Line edge roughness and intrinsic bias for two methacrylate polymer resist systems

Adam Pawloski, Alden Acheta, Harry Levinson, Timothy Michaelson, Andrew Jamieson, Yukio Nishimura, Carlton Willson

JM3, Vol. 5, Issue 02, 023001, (April 2006) https://doi.org/10.1117/12.10.1117/1.2200675

KEYWORDS: Line edge roughness, Polymers, Diffusion, Data modeling, Optical lithography, Image quality, Systems modeling, Photoresist materials, Chemical analysis, Scanning electron microscopy

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Proceedings Article | 29 March 2006 Paper

Paper

The transfer of photoresist LER through etch

Adam Pawloski, Alden Acheta, Scott Bell, Bruno La Fontaine, Tom Wallow, Harry Levinson

Proceedings Volume 6153, 615318 (2006) https://doi.org/10.1117/12.652206

KEYWORDS: Line edge roughness, Etching, Photoresist processing, Photoresist materials, Scanning electron microscopy, Image processing, Image quality, Nickel, Semiconducting wafers, Optical lithography

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Proceedings Article | 29 March 2006 Paper

Paper

Effect of top coat and resist thickness on line edge roughness

Lovejeet Singh, Itty Matthew, Adam Pawloski, Anna Minvielle

Proceedings Volume 6153, 61530W (2006) https://doi.org/10.1117/12.655925

KEYWORDS: Line edge roughness, Thin film coatings, Scanning electron microscopy, Printing, Lithography, Photoresist processing, Photomicroscopy, Immersion lithography, Image processing, Diffusion

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Proceedings Article | 29 March 2006 Paper

Paper

Post-etch LER performance of novel surface conditioner solutions

P. Zhang, M. Jaramillo, S. Cassel, T. Wallow, A. Acheta, A. Pawloski, S. Bell, R. Kim

Proceedings Volume 6153, 61533Y (2006) https://doi.org/10.1117/12.656648

KEYWORDS: Line edge roughness, Etching, Semiconducting wafers, Line width roughness, Photoresist processing, Lithography, Plasma, Critical dimension metrology, Scanning electron microscopy, Plasma etching

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Proceedings Article | 23 March 2006 Paper

Paper

Defect printability study using EUV lithography

Christian Holfeld, Karsten Bubke, Falk Lehmann, Bruno La Fontaine, Adam Pawloski, Siegfried Schwarzl, Frank-Michael Kamm, Thomas Graf, Andreas Erdmann

Proceedings Volume 6151, 61510U (2006) https://doi.org/10.1117/12.656386

KEYWORDS: Photomasks, Semiconducting wafers, Printing, Photoresist processing, Extreme ultraviolet lithography, Image processing, Scanning electron microscopy, Extreme ultraviolet, Lithography, Projection systems

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Proceedings Article | 23 March 2006 Paper

Paper

Investigation of the current resolution limits of advanced extreme ultraviolet (EUV) resists

Patrick Naulleau, Clemens Rammeloo, Jason Cain, Kim Dean, Paul Denham, Kenneth Goldberg, Brian Hoef, Bruno La Fontaine, Adam Pawloski, Carl Larson, Greg Wallraff

Proceedings Volume 6151, 61510Y (2006) https://doi.org/10.1117/12.657005

KEYWORDS: Extreme ultraviolet, Contrast transfer function, Critical dimension metrology, Extreme ultraviolet lithography, Lithography, Printing, Line edge roughness, Fiber optic illuminators, Wavefronts, Interferometry

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Proceedings Article | 22 March 2006 Paper

Paper

Demonstration of phase-shift masks for extreme-ultraviolet lithography

Bruno La Fontaine, Adam Pawloski, Obert Wood, Yunfei Deng, Harry Levinson, Patrick Naulleau, Paul Denham, Eric Gullikson, Brian Hoef, Christian Holfeld, Christian Chovino, Florian Letzkus

Proceedings Volume 6151, 61510A (2006) https://doi.org/10.1117/12.652212

KEYWORDS: Photomasks, Extreme ultraviolet, Reflectivity, Etching, Extreme ultraviolet lithography, Printing, Multilayers, Metrology, Scanning electron microscopy, Lithography

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Proceedings Article | 6 May 2005 Paper

Paper

Comparison of EUV mask architectures by process window analysis

Siegfried Schwarzl, Frank-Michael Kamm, Stefan Hirscher, Klaus Lowack, Wolf-Dieter Domke, Markus Bender, Stefan Wurm, Adam Pawloski, Bruno La Fontaine, Christian Holfeld, Uwe Dersch, Florian Letzkus, Joerg Butschke

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599343

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Multilayers, Printing, Scanning electron microscopy, Cadmium, Extreme ultraviolet lithography, Binary data, Imaging systems

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Proceedings Article | 6 May 2005 Paper

Paper

Two-wave pattern shift aberration monitor for centrally obscured optical systems

Jason Cain, Gregory McIntyre, Patrick Naulleau, Adam Pawloski, Bruno La Fontaine, Obert Wood, Costas Spanos, Andrew Neureuther

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600399

KEYWORDS: Semiconducting wafers, Photomasks, Wavefronts, Wafer-level optics, Interferometry, EUV optics, Extreme ultraviolet lithography, Spatial frequencies, Extreme ultraviolet, Lithographic illumination

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Proceedings Article | 4 May 2005 Paper

Paper

The effects of chemical gradients and photoresist composition on lithographically generated line edge roughness

Timothy Michaelson, Adam Pawloski, Alden Acheta, Yukio Nishimura, C. Grant Willson

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599848

KEYWORDS: Line edge roughness, Photoresist materials, Polymers, Diffusion, Data modeling, Semiconducting wafers, Scanning electron microscopy, Image processing, Data conversion, Mathematical modeling

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Proceedings Article | 6 December 2004 Paper

Paper

Comparative study of mask architectures for EUV lithography

Adam Pawloski, Bruno La Fontaine, Harry Levinson, Stefan Hirscher, Siegfried Schwarzl, Klaus Lowack, Frank-Michael Kamm, Markus Bender, Wolf-Dieter Domke, Christian Holfeld, Uwe Dersch, Patrick Naulleau, Florian Letzkus, Joerg Butschke

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569289

KEYWORDS: Photomasks, Multilayers, Extreme ultraviolet lithography, Semiconducting wafers, Extreme ultraviolet, Reflectors, Cadmium, Critical dimension metrology, Photoresist materials, Scanning electron microscopy

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Proceedings Article | 20 May 2004 Paper

Paper

Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors

Bruno La Fontaine, Adam Pawloski, Yunfei Deng, Christian Chovino, Laurent Dieu, Obert Wood, Harry Levinson

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.539074

KEYWORDS: Photomasks, Semiconducting wafers, Reflectors, Binary data, Extreme ultraviolet lithography, Multilayers, Critical dimension metrology, Reticles, Printing, Optical lithography

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Proceedings Article | 20 May 2004 Paper

Paper

Simulation of fine structures and defects in EUV etched multilayer masks

Yunfei Deng, Bruno La Fontaine, Adam Pawloski, Andrew Neureuther

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537229

KEYWORDS: Photomasks, Etching, Extreme ultraviolet, Critical dimension metrology, Binary data, Multilayers, Optical lithography, Silicon, Refractive index, Near field

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Proceedings Article | 14 May 2004 Paper

Paper

Characterization of line-edge roughness in photoresist using an image fading technique

Adam Pawloski, Alden Acheta, Ivan Lalovic, Bruno La Fontaine, Harry Levinson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537103

KEYWORDS: Line edge roughness, Image quality, Image processing, Chemically amplified resists, Critical dimension metrology, Photoresist processing, Photoresist materials, Scanning electron microscopy, Semiconducting wafers, Optical lithography

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A technique was developed to investigate the role of aerial image contrast and image-log-slope (ILS) on the resulting magnitude of line edge roughness (LER) in resist with the goal of determining if the minimization of LER in current state-of-the-art, chemically amplified resist materials was limited by the quality of the projected aerial image or the materials and processing of the resist. The process of image fading was employed as the vehicle for controlled aerial image degradation. By reducing the quality of the aerial image through fading, the image contrast and ILS were decreased in a well-controlled and predictable manner, resulting in increased magnitude of LER. The link between experiment and simulation was made possible by the identification of the iso-fading condition, which in analogy to the iso-focal dose, results in a unique exposure dose for which the critical dimension (CD) of a resist feature does not change with increasing levels of fading. At the iso-fading condition, experimentally measured values for LER were analyzed as a function of the contrast and ILS of the aerial image used for patterning. It was determined that contrast was a poor predictor of the magnitude of LER though variations in feature type or illumination. The change in LER as a function of the ILS, however, produced a common basis for the comparison of LER through variations in line width, pitch, fading, increased background level of light, and illumination conditions. To include the effects of exposure dose on the resulting LER of resist features, the experimentally measured analog of the ILS, the resist edge-log-slope (RELS), was also used to produce a common curve for the evaluation of resist LER. Although overexposure can be used to further increase the ILS of the aerial image at the edge of the printed feature, the magnitude of 3σ LER in PAR735 resist appeared to be limited to a value of approximately 5.0nm in the limit of infinite RELS. This suggested that while the aerial image plays a strong role on determining the magnitude of LER during resist printing, there also exists a fundamental limitation to LER from the resist materials that cannot be improved by further increase in the quality of the aerial image.

Proceedings Article | 14 May 2004 Paper

Paper

Understanding the role of base quenchers in photoresists

Timothy Michaelson, Andrew Jamieson, Adam Pawloski, Jeffrey Byers, Alden Acheta, C. Willson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537658

KEYWORDS: Photoresist materials, Line edge roughness, Critical dimension metrology, Optical lithography, Polymers, Mathematical modeling

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Proceedings Article | 17 December 2003 Paper

Paper

Influence of antireflection coatings in ArF lithography

Bruno La Fontaine, Adam Pawloski, Alden Acheta, Yunfei Deng, Harry Levinson, Christopher Spence, Christian Chovino, Laurent Dieu, Eric Johnstone, Franklin Kalk

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518220

KEYWORDS: Reticles, Semiconducting wafers, Lithography, Modulation transfer functions, Reflectivity, Spatial frequencies, Critical dimension metrology, Chromium, Antireflective coatings, Scanners

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Proceedings Article | 17 December 2003 Paper

Paper

EUV mask making: an approach based on the direct patterning of the EUV reflector

Christian Chovino, Laurent Dieu, Eric Johnstone, Julio Reyes, Bruno La Fontaine, Harry Levinson, Adam Pawloski

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518259

KEYWORDS: Photomasks, Extreme ultraviolet, Optical lithography, Etching, Extreme ultraviolet lithography, Reflectivity, Inspection, Reflectors, Lithography, Image processing

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Proceedings Article | 24 August 2001 Paper

Paper

Evaluation of the standard addition method to determine rate constants for acid generation in chemically amplified photoresist at 157 nm

Adam Pawloski, Charles Szmanda, Paul Nealey

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436830

KEYWORDS: Vacuum ultraviolet, Absorption, Deep ultraviolet, X-rays, Ionizing radiation, Photoresist materials, Data modeling, Photochemistry, Photoresist processing, Extreme ultraviolet lithography

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Proceedings Article | 29 June 1998 Paper

Paper

Dissolution of phenolic polymers in aqueous base: the influence of polymer structure

Christopher McAdams, Lewis Flanagin, Clifford Henderson, Adam Pawlowski, Pavlos Tsiartas, C. Grant Willson

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312345

KEYWORDS: Polymers, Ionization, Hydrogen, Photoresist materials, Diffusion, Deep ultraviolet, Chromophores, Photoresist developing, Polarization, Ions

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Proceedings Article | 29 June 1998 Paper

Paper

Progress in 193-nm top-surface imaging process development

John Hutchinson, Veena Rao, Guojing Zhang, Adam Pawloski, Carlos Fonseca, Janet Chambers, Susan Holl, Siddhartha Das, Craig Henderson, David Wheeler

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312405

KEYWORDS: Line edge roughness, Etching, Photoresist processing, Chemically amplified resists, Chemistry, Plasma etching, Silicon, Image processing, Plasma, Optical lithography

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Proceedings Article | 7 July 1997 Paper

Paper

Tailoring of a photoactive compound for non-chemically amplified 248-nm resist formulations

Michael Leeson, Adam Pawloski, Vrad Levering, Wang Yueh, C. Grant Willson

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275887

KEYWORDS: Chromophores, Photolysis, Deep ultraviolet, Picture Archiving and Communication System, Photochemistry, Sensors, FT-IR spectroscopy

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Proceedings Article | 14 June 1996 Paper

Paper

Factors affecting the dissolution rate of novolac resins II: developer composition effects

Clifford Henderson, Pavlos Tsiartas, Logan Simpson, Kelly Clayton, Sanju Pancholi, Adam Pawlowski, C. Grant Willson

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241846

KEYWORDS: Ions, Polymers, Alkali metals, Potassium, Macromolecules, Interfaces, Polymer thin films, Molecules, Photoresist developing, Photoresist materials

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Showing 5 of 23 publications

Conference Committee Involvement (4)

Advances in Resist Materials and Processing Technology XXVI

23 February 2009 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXV

25 February 2008 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXIV

26 February 2007 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXIII

20 February 2006 | San Jose, California, United States

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