Dr. Adriano Cola Profile

Dr. Adriano Cola

at Istituto per la Microelettronica e Microsistemi

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Publications (7)

Proceedings Article | 21 May 2015 Paper

Tailoring design and fabrication of capacitive RF MEMS switches for K-band applications

Fabio Quaranta, Anna Persano, Giovanni Capoccia, Antonietta Taurino, Adriano Cola, Pietro Siciliano, Andrea Lucibello, Romolo Marcelli, Emanuela Proietti, Alvise Bagolini, Benno Margesin, Pierluigi Bellutti, Jacopo Iannacci

Proceedings Volume 9517, 95170S (2015) https://doi.org/10.1117/12.2179867

KEYWORDS: Switches, Bridges, Microelectromechanical systems, Actuators, Gold, Metals, K band, Silicon, Dielectrics, Lithography

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Proceedings Article | 5 May 2011 Paper

Development of capacitive RF MEMS switches with TaN and Ta2O5 thin films

Anna Persano, Fabio Quaranta, Adriano Cola, Giorgio De Angelis, Romolo Marcelli, Pietro Siciliano

Proceedings Volume 8066, 80660V (2011) https://doi.org/10.1117/12.886715

KEYWORDS: Switches, Dielectrics, Microelectromechanical systems, Bridges, Thin films, Tantalum, Capacitance, Sputter deposition, Device simulation, Electrodes

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Proceedings Article | 1 April 2003 Paper

Nondestructive diagnostics of bulk GaAs and CdZnTe crystals by nanosecond and picosecond wave-mixing techniques

M. Sudzius, V. Gudelis, A. Aleksiejunas, Jurgis Storasta, Kestutis Jarasiunas, Adriano Cola

Proceedings Volume 5024, (2003) https://doi.org/10.1117/12.497179

KEYWORDS: Diffraction, Crystals, Diffraction gratings, Gallium arsenide, Absorption, Semiconducting wafers, Transmittance, Electrons, Information operations, Nondestructive evaluation

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Proceedings Article | 20 September 2002 Paper

Photodetectors based on heterostructures for optoelectronic applications

Bahram Nabet, Adriano Cola, Andrea Cataldo, Xiying Chen, Fabio Quaranta

Proceedings Volume 4919, (2002) https://doi.org/10.1117/12.465820

KEYWORDS: Doping, Photodetectors, Heterojunctions, Electrons, Gallium arsenide, Sensors, Capacitance, Absorption, Mirrors, Aluminum

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In this work we describe a family of optical devices based on heterojunction and heterodimensional structures and we investigate their static and dynamic properties. Such devices are good candidates, due to their high performance, for utilization as the sensing element for the realization of sensors in the fields of telecommunications, remote sensing, LIDAR and medical imaging. First, we present a Heterostructure Metal-Semiconductor-Metal (HMSM) photodetectors that employ a uniformly doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of the photogenerated electrons. In this first family of devices, two doping levels are compared showing the direct effect of the aiding field due to modulation doping. Subsequently, we analyze a novel Resonant-Cavity-Enhanced (RCE) HMSM photodetector in which a Distributed Bragg Reflector (DBR) is employed in order to reduce the thickness of the absorption layer thus achieving good responsivity and high speed as well as wavelength selectivity. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and on-wafer frequency domain measurements point out the better performance of this last family of detectors, as they can operate in tens of Giga-Hertz range with low dark current and high responsivity. Particularly, the I-V curves show a very low dark current (around 10 picoamps at operative biases); C-V measurements highlight the low geometrical capacitance values; the photocurrent spectrum shows a clear peak at 850 nm wavelength, while time response measurements give a 3 dB bandwidth of about 30 GHz. Small signal model based on frequency domain data is also extracted in order to facilitate future photoreceiver design. Furthermore, two-dimensional numerical simulations have been carried out in order to predict the electrical properties of these detectors. Combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes these devices especially suitable for the above-mentioned applications.

Proceedings Article | 13 December 2000 Paper

Hard x-ray polarimetry with a thick CdTe position sensitive spectrometer

Ezio Caroli, Giuseppe Bertuccio, Adriano Cola, Rui Curado da Silva, Ariano Donati, Waldes Dusi, Gianni Landini, Paul Siffert, Marco Sampietro, John Stephen

Proceedings Volume 4140, (2000) https://doi.org/10.1117/12.409157

KEYWORDS: Sensors, Polarimetry, Photons, Monte Carlo methods, Spectroscopy, Telescopes, Polarization, Electrodes, Point spread functions, Gamma radiation

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Proceedings Article | 21 November 2000 Paper

Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors

Nico Lovergine, A. Mancini, P. Prete, Adriano Cola, Leander Tapfer

Proceedings Volume 4141, (2000) https://doi.org/10.1117/12.407582

KEYWORDS: Crystals, Solids, Vapor phase epitaxy, X-ray detectors, Gallium, Diffusion, Neodymium, Diodes, Sensors, Single crystal X-ray diffraction

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Proceedings Article | 19 October 1999 Paper

Monte Carlo simulator for x-ray spectra analysis of GaAs detectors

Adriano Cola, Lino Reggiani, Lorenzo Vasanelli

Proceedings Volume 3768, (1999) https://doi.org/10.1117/12.366604

KEYWORDS: Monte Carlo methods, Sensors, X-rays, Gallium arsenide, Electrons, X-ray detectors, Energy efficiency, Signal detection, Signal attenuation, Astatine

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Showing 5 of 7 publications

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