Results of fabrication and parameters of infrared detectors based on In-doped lead-tin-telluride (LTT) films are presented. The films were grown using molecular beam epitaxy on BaF2 substrates. The focal plane arrays operated at 7 to 15 K have shown better parameters than those known for impurity photoconductors. The typical average values of NEP were below 1,0×10-18 W /Hz1/2 at T=7K with cut-off λc = 20-25 μm. The operability of 2×128 focal plane arrays was over 90%. The model explaining the electrical and photoelectrical properties of the LTT films based on theories of space charge limited currents (SCLC) and ferroelectric phase transition (FEPT) has been developed. The calculations according to this model are in a good agreement with the experimental data. The laser-excited (λ=336.8 μ) photocurrent was observed, and prospects of usage of LTT-based devices as the submillimeter range detectors were discussed.
Low frequency permittivity of PbSnTe(In) solid solution was investigated in darkness and under illumination. ε=2,000-300,000 was found depending on temperature and illumination. For the first time the increase of ε under illumination by about two orders was observed at LH temperature. Far IR cut off of the effect was estimated. It was found that the best correlation of calculations with experimental data took place if we supposed the presence of narrow band of PbSnTe In sensitivity within 300-400 μm spectral region.
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