Dr. Alexandra Joshi-Imre Profile

Dr. Alexandra Joshi-Imre

at The Univ. of Texas at Dallas

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Proceedings Article | 9 April 2024 Presentation + Paper

Indium nitrate hydrate resist characteristics evaluated by low-energy electron beam exposure

Marisol Valdez, Alexandra Joshi-Imre, Justin Bonner, Leigh Preimesberger, Jesse Grayson, Julia W. Hsu

Proceedings Volume 12957, 129570Q (2024) https://doi.org/10.1117/12.3010889

KEYWORDS: Metal oxides, Photoresist developing, Contrast sensitivity, Indium, Electron beam lithography, FT-IR spectroscopy, Electron beams, Extreme ultraviolet

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We investigate indium nitrate hydrate films as a potential extreme ultraviolet (EUV) resist using electron beam (e-beam) exposure. Indium has an EUV absorption cross-section comparable to tin, the metal element in the state-of-the-art inorganic EUV resists. We choose indium nitrate salts as the metal precursor to minimize residual carbon in the resist. With a calibrated e-beam flood gun, we test the solubility switch in indium nitrate hydrate films as a function of e-beam energy. The resist becomes insoluble upon exposure to the e-beam, exhibiting a negative tone characteristic. The solubility switch occurs for e-beam energy from 500eV down to 92eV, the energy of the EUV photons. Furthermore, to determine the mechanism behind the solubility switch, we study the chemical changes upon e-beam exposure using operando Fourier transform infrared spectroscopy and residual gas analysis. The resists show similar optical contrast and nitric oxide release for three post-application bake (PAB) conditions. The sensitivity and contrast of indium nitrate hydrate are determined from the dose curves obtained using electron beam lithography (EBL) and e-beam flood gun. We obtained an average sensitivity of 226±46μC/cm² from four EBL experiments and a contrast of γ=1.3±0.3. The results from the e-beam flood gun have a sensitivity of 295μC/cm² and γ=1.0. A benchmarking experiment was also performed using an e-beam flood gun on organotin (SnOxo) resist, which has a sensitivity of 165μC/cm² and γ=1.6. The similar characteristics between these two resists indicate that indium nitrate hydrate films hold high promise to be a sensitive EUV resist.

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