e2v have been developing new approaches to mitigate against the effects of radiation damage in CCD sensors. The first of these is our "rad-hard" device technology, primarily developed to reduce the flat-band voltage shift following ionising radiation. With this a very significant improvement has been demonstrated, the flat-band shift reducing from typically 100-200 mV/kRad(Si) with standard devices to only 6 mV/kRad(Si), plus an associated reduction in the increase in surface dark signal. The rad-hard process thereby allows
devices to be operated in environments with up to at least 500kRad total dose and/or with reduced shielding.
Developments aimed at reducing the impact of proton radiation have included the manufacture of p-channel devices. Our initial data indicates that at -50°C the increase in charge transfer inefficiency is reduced by a factor of two times for parallel transfer and five times for serial transfer.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.