We present work towards a visible wavelength tuneable external cavity laser (ECL) on a silicon nitride platform working around 640 nm. A ring resonator Vernier structure on the photonic integrated circuit (PIC) provides delayed feedback with spectral filtering and tuning. Gain is provided by a reflective semiconductor optical amplifier (SOA) grown on a GaAs substrate and integrated by pick-and-place flip-chip assembly. In a novel coupling scheme, the 1-dB in-plane placement tolerance is relaxed by a multi-mode edge-coupler to ± 2.6 µm in the direction parallel to the SOA edge and to displacements up to 3.5 µm from the PIC interface along the SOA’s optical axis. Pedestals defined in the PIC guarantee vertical alignment.
We are reporting on a Multi-Color Laser Engine (MLE) multiplexing four wavelengths (405 nm, 488 nm, 561 nm, 640 nm) by means of a Photonic Integrated Circuit (PIC) with Silicon Nitride (SiN) waveguides. Multiple building blocks are tested that allow manipulating the light in the waveguides to achieve fiber switching and variable optical attenuation. To slow down facet degradation and extend chip lifetime at near Ultra-Violet (UV) wavelengths (405 nm), a lateral endcap is implemented on chip and tested for reliability. Reasonable coupling and on-chip losses have been achieved in view of a practical use of the technology.
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