Dr. Allan L. Sagle Profile

Dr. Allan L. Sagle

Engineer at Applied Materials Inc

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Publications (7)

Proceedings Article | 28 June 2005 Paper

Exploring the fundamental limit of CD control: shot noise and CD uniformity improvement through resist thickness

Ming Yu, Allan Sagle, Benny Buller

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617058

KEYWORDS: Data modeling, Molecules, Critical dimension metrology, Lithography, Beam shaping, Chemically amplified resists, Scattering, Diffusion, Metrology, Interference (communication)

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Proceedings Article | 16 June 2005 Paper

Exploring the fundamental limit of CD control: a measurement of shot noise induced CDU in e-beam lithography

Ming Yu, Allan Sagle, Benny Buller

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637293

KEYWORDS: Metrology, Electrons, Data modeling, Beam shaping, Molecules, Lithography, Scattering, Critical dimension metrology, Laser scattering, Electron beam lithography

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Proceedings Article | 6 May 2005 Paper

Exploring the fundamental limit of CD control: a model for shot noise in lithography

Ming L. Yu, Allan Sagle, Benny Buller

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.613661

KEYWORDS: Electrons, Molecules, Line edge roughness, Lithography, Scattering, Metrology, Critical dimension metrology, Data modeling, Backscatter, Laser scattering

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Proceedings Article | 27 December 2002 Paper

Raster-shaped beam pattern generation for 70-nm photomask production

Thomas Newman, Ira Finklestein, Huei-Mei Kao, Sriram Krishnaswami, Darryn Long, Richard Lozes, Henry Pearce-Percy, Allan Sagle, Jeffrey Varner, Stacey Winter, Mark Gesley, Frank Abboud

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468198

KEYWORDS: Photomasks, Beam shaping, Optical proximity correction, Raster graphics, Modulation, Electron beam lithography, Optical lithography, Chemically amplified resists, Calibration, Lithography

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Proceedings Article | 30 December 1999 Paper

System architecture choices for an advanced mask writer (100 to 130 nm)

Varoujan Chakarian, Frederick Raymond, Charles Sauer, Sergey Babin, Robert Innes, Allan Sagle, Ulrich Hofmann, Bassam Shamoun, David Trost, Abe Ghanbari, Frank Abboud

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373318

KEYWORDS: Vestigial sideband modulation, Photomasks, Raster graphics, Lithography, Electron beam lithography, Optical proximity correction, Control systems, RGB color model, Photoresist processing, Reticles

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Proceedings Article | 25 August 1999 Paper

Design considerations for an electron-beam pattern generator for the 130-nm generation of masks

Frank Abboud, Sergey Babin, Varoujan Chakarian, Abe Ghanbari, Robert Innes, Frederick Raymond, Allan Sagle, Charles Sauer

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360239

KEYWORDS: Photoresist processing, Photomasks, Critical dimension metrology, Raster graphics, Vestigial sideband modulation, Compact discs, Monte Carlo methods, Lithography, Dry etching, Manufacturing

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Proceedings Article | 19 May 1995 Paper

0.25-um lithography using a 50-kV shaped electron-beam vector scan system

Mark Gesley, Terry Mulera, C. Nurmi, J. Radley, Allan Sagle, Keith Standiford, Zoilo Tan, John Thomas, Lee Veneklasen

Proceedings Volume 2437, (1995) https://doi.org/10.1117/12.209157

KEYWORDS: Electronics, Calibration, Reticles, Lithography, Distortion, Critical dimension metrology, X-rays, Semiconducting wafers, Field programmable gate arrays, Error analysis

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Performance data from a prototype 50 kV shaped electron-beam (e-beam) pattern generator is presented. This technology development is targeted towards 180-130 nm device design rules. It will be able to handle 1X NIST X-ray membranes, glass reduction reticles, and 4- to 8-inch wafers. The prototype system uses a planar stage adapted from the IBM EL-4 design. The electron optics is an 50 kV extension of the AEBLE%+TM) design. Lines and spaces of 0.12 micrometers with < 40 nm corner radius are resolved in 0.4 micrometers thick resist at 50 kV. This evolutionary platform will evolve further to include a new 100 kV column with telecentric deflection and a 21-bit (0.5 mm) major field for improved placement accuracy. A unique immersion shaper, faster data path electronics, and 15-bit (32 micrometers ) minor field deflection electronics will substantially increase the flash rate. To match its much finer address structure, the pattern generator figure word size will increase from 80 to 96 bits. The data path electronics uses field programmable gate array (FPGA) logic allowing writing strategy optimization via software reconfiguration. An advanced stage position control (ASPC) includes three-axis, (lambda) /1024 interferometry and a high bandwidth dynamic corrections processor (DCP). Along with its normal role of coordinate transformation and dynamic correction of deflection distortion, astigmatism, and defocus; the DCP improves accuracy by modifying deflection conditions and focus according to measured substrate height variations. It also enables yaw calibration and correction for Write-on-the Fly^TM motion. The electronics incorporates JTAG components for built-in self- test (BIST), as well as syndrome checking to ensure data integrity. The design includes diagnostic capabilities from offsite as well as from the operator console. A combination of third-party software and an internal job preparation software system is used to fracture patterns. It handles tone reversal, overlap removal, sizing, and proximity correction. Processing of large files in a commercial mask shop environment is made more efficient by retaining hierarchy and using parallel processing and data compression techniques. Large GDSII^TM and MEBES data files can be processed. Data includes timing benchmarks for a 1 Gbit DRAM on both proximity and reduction reticles. The paper presents 50 kV results on silicon and quartz substrates along with examples of overlay to an external grid, field butting, and critical dimension (CD) control data. Selective experiments testing system stability, calibration accuracy, and local correction software implementation on a VAX control computer are also given.

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