Bayesian dropout approximation in deep learning neural networks: analysis of self-aligned quadruple patterning
Characterization of EUV image fading induced by overlay corrections using pattern shift response metrology
Edge placement error fundamentals and impact of EUV: will traditional design-rule calculations work in the era of EUV?
EPE fundamentals and impact of EUV: Will traditional design-rule calculations work in the era of EUV?
Minimizing wafer overlay errors due to EUV mask non-flatness and thickness variations for N7 production
Overlay improvement roadmap: strategies for scanner control and product disposition for 5-nm overlay
Improving the power-performance of multicore processors through optimization of lithography and thermal processing
New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins
Toward the ultimate storage device: the fabrication of an ultrahigh-density memory device with 193-nm lithography
Model study by FT-IR of the interaction of select cholate dissolution inhibitors with poly(norbornene-alt-maleic anhydride) and its derivatives
Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography
193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids
Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development