Dr. Amélie Dussaigne Profile

Dr. Amélie Dussaigne

Senior scientist at CEA-LETI

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 9 March 2024 Presentation

Full InGaN red emission on different InGaN pseudo-substrates for native full color micro-displays

Amélie Dussaigne, Frederic Barbier, Patrick Le Maitre, Helge Haas, Jean-Christophe Pillet, Guillaume Veux, Colin Paillet, Adeline Grenier, Névine Grenier, Zineb Saghi, Audrey Jannaud, Adrien Michon, Stéphane Vézian, Benjamin Damilano, Bérangère Hyot

Proceedings Volume PC12886, PC1288611 (2024) https://doi.org/10.1117/12.3003161

KEYWORDS: Indium gallium nitride, Quantum wells, Electroluminescence, Virtual reality, Quantum limits, Photoluminescence, Indium nitride, Electric fields, Diodes, Crystals

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Proceedings Article | 9 March 2024 Presentation

Exploring carrier diffusion in varying thickness InGaN/GaN quantum wells

Simon Litschgi, Amélie Dussaigne, Névine Rochat, Guillaume Veux, Quentin Durlin, Bruno Gayral, Fabian Rol

Proceedings Volume PC12886, PC128860C (2024) https://doi.org/10.1117/12.3002269

KEYWORDS: Quantum wells, Diffusion, Indium gallium nitride, Silicon, Sapphire, Gallium nitride, Vapor phase epitaxy, Shadows, Red lasers, Quantum optical communication

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Proceedings Article | 14 March 2023 Paper

Native InGaN red-green-blue micro-LEDs for full color micro-displays

A. Dussaigne, F. Barbier, H. Haas, J. Pillet, B. Samuel, G. Veux, P. Le Maitre

Proceedings Volume 12441, 1244108 (2023) https://doi.org/10.1117/12.2647988

KEYWORDS: Indium gallium nitride, Quantum buffers, Gallium nitride, Sapphire, Indium nitride, Quantum wells, Light emitting diodes, Emission wavelengths, External quantum efficiency, Alloys

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Proceedings Article | 5 March 2021 Presentation

Full InGaN red micro light emitting diodes: How to enhance the InN mole fraction

Amélie Dussaigne

Proceedings Volume 11706, 117060D (2021) https://doi.org/10.1117/12.2578272

KEYWORDS: Indium gallium nitride, Indium nitride, Light emitting diodes, Virtual reality, Transmission electron microscopy, Quantum wells, Internal quantum efficiency, Gallium nitride, Electroluminescence, Diodes

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Proceedings Article | 10 March 2020 Presentation

Gallium pollution in an AIXTRON close coupled showerhead reactor and its serious effect on the growth process stability of InGaN layers for optoelectronic applications (Conference Presentation)

Mrad Mrad, Christophe Licitra, Amelie Dussaigne, Victor Yon, Jerome Richy, Matthieu Lafossas, Joel Kanyandekwe, Guy Feuillet, Matthew Charles

Proceedings Volume 11280, 1128007 (2020) https://doi.org/10.1117/12.2544282

KEYWORDS: Gallium, Pollution, Indium gallium nitride, Optoelectronics, Indium, Optoelectronic devices, Optical storage, Laser based displays, Laser applications, Projection systems

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Proceedings Article | 19 April 2017 Presentation

Long wavelength emission on relaxed InGaN substrates (Conference Presentation)

Armelle Even, Gautier Laval, Olivier Ledoux, Pierre Ferret, David Sotta, Eric Guiot, Francois Levy, Ivan-Christophe Robin, Amélie Dussaigne

Proceedings Volume 10104, 101040G (2017) https://doi.org/10.1117/12.2252290

KEYWORDS: Aluminium phosphide, Indium gallium nitride, Light emitting diodes, Luminescence, Quantum efficiency, Indium, Gallium nitride, Quantum wells, Semiconductor lasers, Internal quantum efficiency

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Proceedings Article | 25 September 2014 Paper

Complete solid state lighting (SSL) line at CEA LETI

I. Robin, P. Ferret, A. Dussaigne, C. Bougerol, D. Salomon, X. Chen, M. Charles, P. Tchoulfian, A. Gasse, A. Lagrange, M. Consonni, H. Bono, F. Levy, Y. Desieres, A. Aitmani, S. Makram-Matta, E. Bialic, P. Gorrochategui, L. Mendizabal

Proceedings Volume 9190, 91900I (2014) https://doi.org/10.1117/12.2060514

KEYWORDS: Light emitting diodes, Gallium nitride, Solid state lighting, Silicon, Light sources and illumination, Semiconducting wafers, Quantum wells, LED lighting, Quantum efficiency, Packaging

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Proceedings Article | 23 January 2010 Paper

Growth of intersubband GaN/AlGaN heterostructures

A. Dussaigne, S. Nicolay, D. Martin, A. Castiglia, N. Grandjean, L. Nevou, H. Machhadani, M. Tchernycheva, L. Vivien, F. Julien, T. Remmele, M. Albrecht

Proceedings Volume 7608, 76080H (2010) https://doi.org/10.1117/12.847082

KEYWORDS: Aluminum nitride, Absorption, Interfaces, Gallium nitride, Quantum wells, Modulation, Modulators, Electro optics, Temperature metrology, Telecommunications

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Proceedings Article | 22 April 2006 Paper

Dynamic response of AlGaN based sensors under excimer laser irradiation

G. Mazzeo, J-L. Reverchon, G. Conte, A. Dussaigne, J-Y. Duboz

Proceedings Volume 6189, 61890E (2006) https://doi.org/10.1117/12.664430

KEYWORDS: Sensors, Excimer lasers, Diodes, Pulsed laser operation, Capacitance, Silicon, Semiconductors, Aluminum, Resistance

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Proceedings Article | 14 October 2005 Paper

Status of AlGaN based focal plane arrays for UV solar blind detection

Jean-Luc Reverchon, Giovanni Mazzeo, Amélie Dussaigne, Jean-Yves Duboz

Proceedings Volume 5964, 596402 (2005) https://doi.org/10.1117/12.625223

KEYWORDS: Sensors, Ultraviolet radiation, Charge-coupled devices, Ultraviolet detectors, Optical filters, Visible radiation, Antireflective coatings, Resistance, CMOS sensors, Diodes

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Showing 5 of 10 publications

Conference Committee Involvement (7)

Light-Emitting Devices, Materials, and Applications XXIX

27 January 2025 | San Francisco, California, United States

Light-Emitting Devices, Materials, and Applications XXVIII

29 January 2024 | San Francisco, California, United States

Light-Emitting Devices, Materials, and Applications XXVII

30 January 2023 | San Francisco, California, United States

Light-Emitting Devices, Materials, and Applications XXVI

24 January 2022 | San Francisco, California, United States

Light-Emitting Devices, Materials, and Applications XXV

6 March 2021 | Online Only, California, United States

Showing 5 of 7 Conference Committees

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