Dr. Anat Marchelli Profile

Dr. Anat Marchelli

at KLA Israel

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Publications (5)

Proceedings Article | 27 April 2018 Paper

Spectral tunability for accuracy, robustness, and resilience

Einat Peled, Eran Amit, Yuval Lamhot, Alexander Svizher, Dana Klein, Anat Marchelli, Roie Volkovich, Tal Yaziv, Aaron Cheng, Honggoo Lee, Sangjun Han, Minhyung Hong, Seungyoung Kim, Jieun Lee, Dongyoung Lee, Eungryong Oh, Ahlin Choi, DongSub Choi, DoHwa Lee, Sanghuck Jeon, Jungtae Lee, Seongjae Lee, Zephyr Liu, Jeongpyo Lee, John Robinson

Proceedings Volume 10585, 105850S (2018) https://doi.org/10.1117/12.2300507

KEYWORDS: Metrology, Semiconducting wafers, Laser scattering, Laser metrology, Overlay metrology, Quality measurement, Scatterometry, Apodization, Polarization, Image quality

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In overlay (OVL) metrology the quality of measurements and the resulting reported values depend heavily on the measurement setup used. For example, in scatterometry OVL (SCOL) metrology a specific target may be measured with multiple illumination setups, including several apodization options, two possible laser polarizations, and multiple possible laser wavelengths. Not all possible setups are suitable for the metrology method as different setups can yield significantly different performance in terms of the accuracy and robustness of the reported OVL values. Finding an optimal measurement setup requires great flexibility in measurement, to allow for high-resolution landscape mapping (mapping the dependence of OVL, other metrics, and details of pupil images on measurement setup). This can then be followed by a method for analyzing the landscape and selecting an accurate and robust measurement setup. The selection of an optimal measurement setup is complicated by the sensitivity of metrology to variations in the fabrication process (process variations) such as variations in layer thickness or in the properties of target symmetry. The metrology landscape changes with process variations and maintaining optimal performance might require continuous adjustments of the measurement setup. Here we present a method for the selection and adjustment of an optimal measurement setup. First, the landscape is measured and analyzed to calculate theory-based accurate OVL values as well as quality metrics which depend on details of the pupil image. These OVL values and metrics are then used as an internal ruler (“self-reference”), effectively eliminating the need for an external reference such as CD-SEM. Finally, an optimal measurement setup is selected by choosing a setup which yields the same OVL values as the self-reference and is also robust to small changes in the landscape. We present measurements which show how a SCOL landscape changes within wafer, wafer to wafer, and lot to lot with intentionally designed process variations between. In this case the process variations cause large shifts in the SCOL landscape and it is not possible to find a common optimal measurement setup for all wafers. To deal with such process variations we adjust the measurement setup as needed. Initially an optimal setup is chosen based on the first wafer. For subsequent wafers the process stability is continuously monitored. Once large process variations are detected the landscape information is used for selecting a new measurement setup, thereby maintaining optimal accuracy and robustness. Methods described in this work are enabled by the ATL (Accurate Tunable Laser) scatterometry-based overlay metrology system.

Proceedings Article | 22 March 2018 Presentation + Paper

Overlay and stitching metrology for massively parallel electron-beam lithography

Guido Rademaker, Jonathan Pradelles, Stéfan Landis, Stephane Rey, Anna Golotsvan, Anat Marchelli, Tal Itzkovich, Tetyana Shapoval, Ronny Haupt, Erwin Slot, Guido de Boer, Dhara Dave, Marco Wieland, Laurent Pain

Proceedings Volume 10585, 105850U (2018) https://doi.org/10.1117/12.2297535

KEYWORDS: Overlay metrology, Metrology, Electron beam lithography, Lenses, Distance measurement, Electron beams, Raster graphics, Semiconducting wafers, Time metrology, Process control

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Proceedings Article | 24 March 2009 Paper

Overlay mark optimization using the KTD signal simulation system

Anat Marchelli, Karsten Gutjahr, Michael Kubis, Christian Sparka, Mark Ghinovker, Alessandra Navarra, Amir Widmann

Proceedings Volume 7272, 72722Y (2009) https://doi.org/10.1117/12.813594

KEYWORDS: Image segmentation, Signal processing, Semiconducting wafers, Metals, Overlay metrology, Metrology, Photomasks, Databases, Optical design, Data modeling

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Proceedings Article | 16 April 2008 Paper

Overlay control using scatterometry based metrology (SCOM) in production environment

Berta Dinu, Stefan Fuchs, Uwe Kramer, Michael Kubis, Anat Marchelli, Alessandra Navarra, Christian Sparka, Amir Widmann

Proceedings Volume 6922, 69222S (2008) https://doi.org/10.1117/12.771581

KEYWORDS: Overlay metrology, Scatterometry, Metrology, Semiconducting wafers, Signal processing, Lithography, Wafer testing, Sensors, Optical design, Spectroscopy

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Proceedings Article | 22 March 2008 Paper

Diffraction based overlay metrology: accuracy and performance on front end stack

Philippe Leray, Shaunee Cheng, Daniel Kandel, Michael Adel, Anat Marchelli, Irina Vakshtein, Mauro Vasconi, Bartlomiej Salski

Proceedings Volume 6922, 69220O (2008) https://doi.org/10.1117/12.772516

KEYWORDS: Overlay metrology, Scatterometry, Semiconducting wafers, Diffraction, Chemical mechanical planarization, Silicon, Etching, Metrology, Scanners, Detection and tracking algorithms

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