Prof. Andreas Hangleiter Profile

Prof. Andreas Hangleiter

Professor at Technische Univ Braunschweig

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Author

Publications (10)

Proceedings Article | 23 February 2018 Presentation + Paper

Internal quantum efficiency of nitride light emitters: a critical perspective

Andreas Hangleiter, Torsten Langer, Philipp Farr, Fedor Alexej Ketzer, Heiko Bremers, Uwe Rossow

Proceedings Volume 10532, 105321P (2018) https://doi.org/10.1117/12.2290082

KEYWORDS: Internal quantum efficiency, Quantum wells, Luminescence, Light emitting diodes, External quantum efficiency, Picosecond phenomena, Excitons, Semiconductors, Quantum efficiency

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Proceedings Article | 16 February 2017 Paper

Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells

Andreas Hangleiter, Torsten Langer, Philipp Farr, Fedor Alexej Ketzer, Philipp Horenburg, Ernst Ronald Korn, Heiko Bremers, Uwe Rossow

Proceedings Volume 10104, 101040Q (2017) https://doi.org/10.1117/12.2252036

KEYWORDS: Quantum wells, Excitons, Polarization, Electrons, Luminescence, Nanostructures, Physics, Gallium nitride, Internal quantum efficiency, Oscillators, Picosecond phenomena, Light emitting diodes, Quantum efficiency, Sapphire

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Proceedings Article | 13 March 2015 Paper

Efficiency droop in nitride LEDs revisited: impact of excitonic recombination processes

A. Hangleiter, Torsten Langer, Marina Gerhard, Dimitry Kalincev, A. Kruse, Heiko Bremers, U. Rossow, M. Koch

Proceedings Volume 9363, 93631R (2015) https://doi.org/10.1117/12.2078803

KEYWORDS: Quantum wells, Light emitting diodes, Luminescence, Gallium nitride, Data modeling, Electrons, Absorption, Excitons, Physics, Temperature metrology

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Proceedings Article | 27 March 2013 Paper

Nonradiative recombination due to point defects in GaInN/GaN quantum wells induced by Ar implantation

Torsten Langer, Hans-Georg Pietscher, Heiko Bremers, Uwe Rossow, Dirk Menzel, Andreas Hangleiter

Proceedings Volume 8625, 862522 (2013) https://doi.org/10.1117/12.2002843

KEYWORDS: Quantum wells, Argon, Annealing, Laser induced fluorescence, Luminescence, Gallium nitride, Neodymium, Ions, Temperature metrology, Spectroscopy

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Proceedings Article | 28 February 2012 Paper

Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN

Jens Rass, Tim Wernicke, Simon Ploch, Moritz Brendel, Andreas Kruse, Andreas Hangleiter, Wolfgang Scheibenzuber, Ulrich Schwarz, Markus Weyers, Michael Kneissl

Proceedings Volume 8262, 826218 (2012) https://doi.org/10.1117/12.907865

KEYWORDS: Polarization, Crystals, Resonators, Laser resonators, Laser damage threshold, Quantum wells, Gallium nitride, Waveguides, Indium, Semiconductor lasers

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Proceedings Article | 8 April 2004 Paper

Ultrafast polarization dynamics in optically excited biased quantum wells

Dmitry Turchinovich, Boris Monozon, Martin Koch, Sandra Lahmann, Uwe Rossow, Andreas Hangleiter, Peter Jepsen

Proceedings Volume 5354, (2004) https://doi.org/10.1117/12.537783

KEYWORDS: Quantum wells, Terahertz radiation, Polarization, Absorption, Photons, Capacitors, Ultrafast phenomena, Femtosecond phenomena, Ocean optics, Pulsed laser operation

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Proceedings Article | 28 August 2002 Paper

Optical gain in wide-bandgap group-III nitrides

Andreas Hangleiter

Proceedings Volume 10303, 103030A (2002) https://doi.org/10.1117/12.482625

KEYWORDS: Semiconductor lasers, Laser damage threshold, Polarization, Waveguides

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Proceedings Article | 14 July 2000 Paper

Internal electric fields in nitride-based heterostructures

Andreas Hangleiter

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391450

KEYWORDS: Quantum wells, Polarization, Oscillators, Heterojunctions, Optical properties, Electron beams, Luminescence, Light emitting diodes, Quantum efficiency, Gallium nitride

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Proceedings Article | 6 August 1999 Paper

Optical gain and waveguiding in GaN-based quantum well lasers

S. Heppel, R. Wirth, J. Im, Juergen Off, Ferdinand Scholz, Andreas Hangleiter

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356893

KEYWORDS: Quantum wells, Sapphire, Silicon carbide, Polarization, Cladding, Gallium nitride, Semiconductor lasers, Waveguides, Refractive index, Tin

Proceedings Article | 4 December 1998 Paper

Red AlGaInP-lasers: tunable and powerful

Heinz Schweizer, N. Lichtenstein, H. Gauggel, Justus Kuhn, R. Hofmann, R. Winterhoff, Christian Geng, A. Mortiz, Andreas Hangleiter, Ferdinand Scholz

Proceedings Volume 3491, (1998) https://doi.org/10.1117/12.328678

KEYWORDS: Waveguides, Oscillators, Laser damage threshold, Semiconductor lasers, Resonators, Tunable lasers, Optical amplifiers, High power lasers, Reflectivity, Dry etching

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Showing 5 of 10 publications

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