Dr. Andreas Schneider Profile

Dr. Andreas Schneider

Microsystems Scientist at Rutherford Appleton Lab

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Publications (6)

Proceedings Article | 24 August 2015 Paper

CdTe focal plane detector for hard x-ray focusing optics

Paul Seller, Matthew Wilson, Matthew Veale, Andreas Schneider, Jessica Gaskin, Colleen Wilson-Hodge, Steven Christe, Albert Shih, Kyle Gregory, Andrew Inglis, Marco Panessa

Proceedings Volume 9601, 960103 (2015) https://doi.org/10.1117/12.2191617

KEYWORDS: Sensors, Spatial resolution, X-ray optics, X-rays, Astrophysics, Space telescopes, Spectroscopy, Telescopes, Electrons, Field programmable gate arrays

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Proceedings Article | 24 April 2003 Paper

Surface microstructuring of biocompatible bone analogue material HAPEX using LIGA technique and embossing

Andreas Schneider, Susan Rea, Ejaz Huq, William Bonfield

Proceedings Volume 5116, (2003) https://doi.org/10.1117/12.498779

KEYWORDS: Nickel, Bone, Silicon, Protactinium, Electroplating, Lithography, Ultraviolet radiation, Temperature metrology, Photomasks, Composites

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Proceedings Article | 10 September 2002 Paper

Microgripper for handling and assembly in MEMS produced by SU-8 technology

Dragan Petrovic, Gordana Popovic, Tatjana Petrovic, Andreas Schneider, Ejaz Huq, Helmut Detter, Friedrich Franek

Proceedings Volume 4928, (2002) https://doi.org/10.1117/12.483150

KEYWORDS: Nickel, Microelectromechanical systems, Polishing, Calibration, Semiconducting wafers, Prototyping, Gold, Scanning electron microscopy, Photoresist materials, Ultraviolet radiation

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Proceedings Article | 19 November 2001 Paper

LIGA: a fabrication technology for industry?

Ronald Lawes, Graham Arthur, Andreas Schneider

Proceedings Volume 4593, (2001) https://doi.org/10.1117/12.448845

KEYWORDS: Synchrotrons, Photomasks, Manufacturing, Polymethylmethacrylate, X-rays, Beryllium, Nickel, Semiconducting wafers, Photoresist processing, Gold

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Proceedings Article | 20 August 2001 Paper

Deep x-ray lithography with the SU-8 resist

Laurence Singleton, Alexei Bogdanov, Serguei Peredkov, Oliver Wilhelmi, Andreas Schneider, Carsten Cremers, Stephan Megtert, Andreas Schmidt

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436647

KEYWORDS: Polymethylmethacrylate, Critical dimension metrology, X-rays, X-ray lithography, Aluminum, Synchrotrons, Scanning electron microscopy, Photomasks, Photons, Calibration

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Although the process of deep x-ray lithography with PMMA achieves good resolution, it requires significant exposure times because of the low sensitivity of PMMA to x-rays. Therefore resist materials, which can achieve high resolution, but which are inherently more sensitive than PMMA, are desirable. Here it is shown, that x-ray exposures of the SU-8 resist can achieve high resolution with substantially reduced exposure times. Irradiation at the synchrotron source of DCI at Lure (Paris) and MAXLAB (Lund, Sweden) demonstrated a reduced exposure time for a 600 micrometers thick SU-8 relative to PMMA. The does needed to obtain standing structures was 30 J/Cm³ for DCI and 52 J/CM³ for MAXLAB. A 600 micrometers thick PMMA resist requires a typical bottom does of 4 kJ/cm³, so Su-8 is considerably more sensitive to x-rays than PMMA. Preliminary critical dimension measurements (CD) of the 600 micrometers SU-8 resist structures have been obtained for the entire height of the structure, which was exposed at DCI. The CD measurements were made in a Scanning Electron Microscope (SEM) using 10 micrometers wide structures, which have a 20micrometers pitch, this being used to calibrate the measurements. These measurements show that the gain in the critical dimension per structure edge is dependent on the bottom dose. Doses of 30 J/cm³ achieved a CD gain per edge of +0.5 micrometers , while doses of 40 J/cm³ Yielded a CD gain per edge of 0.9 micrometers . However, the gain in the CD per edge is critically dependent on the solvent content in the resist. Doses of 40 J/cm³ into a resist with a 2% residual solvent content yielded CD gains per edge of 0.3micrometers . In addition, the dose profile in the resist does not change the CD values significantly. It has been shown that the resolution of the x-ray exposed SU-8 structures compare quite favorable with PMMA, but the exposure time for SU-8 is approximately 100 times less than that for PMMA. This significantly improves throughput for deep x-ray lithography processes.

Proceedings Article | 30 April 2001 Paper

Profile control of SU-8 photoresist using different radiation sources

Zheng Cui, Derek Jenkins, Andreas Schneider, Geoff McBride

Proceedings Volume 4407, (2001) https://doi.org/10.1117/12.425291

KEYWORDS: Photoresist materials, X-rays, Ultraviolet radiation, Electron beams, Electron beam lithography, Collimators, Scattering, Mercury, Lamps, Laser scattering

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