Dr. Andrei V. Osinsky Profile

Dr. Andrei V. Osinsky

CEO at Agnitron Technology Inc

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Author

Publications (14)

Proceedings Article | 16 March 2024 Presentation

MOCVD process for 10 um+ thick β-Ga2O3 drift layers and doping control

Andrei Osinsky, Fikadu Alema, Aaron Fine

Proceedings Volume PC12887, PC128870H (2024) https://doi.org/10.1117/12.3011184

KEYWORDS: Metalorganic chemical vapor deposition, Doping, Heterojunctions, Etching, Nitrogen, Thin films, Thin film growth, Semiconductors, Resistance, Projection devices

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Proceedings Article | 16 March 2023 Presentation

MOCVD growth of β-(AlGa)2O3 on β-Ga2O3 using N2O (Conference Presentation)

Fikadu Alema, William Brand, Takeki Itoh, Andrei Osinsky, James Speck

Proceedings Volume PC12422, PC124220S (2023) https://doi.org/10.1117/12.2668702

KEYWORDS: NOx, Metalorganic chemical vapor deposition, Aluminum, Oxygen, Field effect transistors, Conduction bands, Nitrous oxide, Nitrogen, Alloys

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Proceedings Article | 5 March 2022 Presentation

β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition

Esmat Farzana, Fikadu Alema, Takeki Itoh, Nolan Hendricks, Akhil Mauze, Andrei Osinsky, James Speck

Proceedings Volume PC12002, PC120020H (2022) https://doi.org/10.1117/12.2617832

KEYWORDS: Metalorganic chemical vapor deposition, Epitaxy, Chemical vapor deposition, Doping, Dielectrics, Solid state electronics, Physics, Low pressure chemical vapor deposition, Lithium, Homoepitaxy

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Proceedings Article | 12 April 2021 Presentation

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Marko Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, Charles Eddy

Proceedings Volume 11742, 117420W (2021) https://doi.org/10.1117/12.2588499

KEYWORDS: Metalorganic chemical vapor deposition, Field effect transistors, Transistors, Silicon carbide, Scattering, Temperature metrology, Silicon, Semiconductors, Roads, Resistance

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Proceedings Article | 5 March 2021 Presentation

High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications

Proceedings Volume 11687, 116870S (2021) https://doi.org/10.1117/12.2588944

KEYWORDS: Metalorganic chemical vapor deposition, Field effect transistors, Electronics, Transistors, Silicon carbide, Scattering, Atmospheric plasma, Silicon, Semiconductors, Roads

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Proceedings Article | 5 March 2021 Presentation

Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field

Esmat Farzana, Fikadu Alema, Wan Ying Ho, Akhil Mauze, Takeki Itoh, Andrei Osinsky, James Speck

Proceedings Volume 11687, 116870G (2021) https://doi.org/10.1117/12.2591768

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Proceedings Article | 24 February 2017 Paper

Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film

Fikadu Alema, Brian Hertog, Andrei Osinsky, Partha Mukhopadhyay, Mykyta Toporkov, Winston Schoenfeld, Elaheh Ahmadi, James Speck

Proceedings Volume 10105, 101051M (2017) https://doi.org/10.1117/12.2260824

KEYWORDS: Photodiodes, Thin films, Diodes, Metalorganic chemical vapor deposition, Germanium, Photodetectors, Oxygen, Silicon carbide, Ultraviolet radiation, Missiles, Quantum efficiency, External quantum efficiency, Tin, Temperature metrology

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Proceedings Article | 24 February 2017 Paper

MgZnO grown by molecular beam epitaxy on N-Type B-Ga2O3 for UV Schottky barrier solar-blind photodetectors

Mykyta Toporkov, Partha Mukhopadhyay, Haider Ali, Valeria Beletsky, Fikadu Alema, Andrei Osinsky, Winston Schoenfeld

Proceedings Volume 10105, 101051N (2017) https://doi.org/10.1117/12.2254937

KEYWORDS: Photodetectors, Thin films, Platinum, Zinc oxide, Crystals, Electrodes, Aluminum nitride, Laser crystals, Thin film growth, Molecular beam epitaxy, Ultraviolet radiation, Transmission electron microscopy, Surface roughness, Atomic force microscopy, Sapphire, Diodes

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Proceedings Article | 27 February 2016 Paper

High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD)

Fikadu Alema, Oleg Ledyaev, Ross Miller, Valeria Beletsky, Brian Hertog, Andrei Osinsky, Winston Schoenfeld

Proceedings Volume 9749, 97490Y (2016) https://doi.org/10.1117/12.2217139

KEYWORDS: Magnesium, Zinc oxide, Thin films, Atomic force microscopy, Vapor phase epitaxy, Chemical vapor deposition, Metalorganic chemical vapor deposition, Transmittance, Spectroscopy, Crystals, Photodetectors, Aluminum nitride, Absorption, Interfaces, Sapphire

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Proceedings Article | 7 September 2006 Paper

Modeling and characterization of GaN p-i-n photodiodes

Jie Deng, Subrata Halder, James C. Hwang, Brian Hertog, Junqing Xie, Amir Dabiran, Andrei Osinsky

Proceedings Volume 6294, 62940N (2006) https://doi.org/10.1117/12.682087

KEYWORDS: Resistance, Gallium nitride, Diodes, PIN photodiodes, Photodiodes, Temperature metrology, Thermal modeling, Sapphire, Silicon carbide, Silicon

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Proceedings Article | 3 March 2006 Paper

Studies of electron trapping in III-nitride semiconductors

Olena Lopatiuk, Andrei Osinsky, Leonid Chernyak

Proceedings Volume 6121, 61210H (2006) https://doi.org/10.1117/12.658016

KEYWORDS: Gallium nitride, Diffusion, Manganese, Aluminum, Gallium, Magnesium, Electron beams, Temperature metrology, Ionization, Iron

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Proceedings Article | 3 March 2006 Paper

Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices

Mohammad Kauser, Andrei Osinsky, Brian Hertog, Amir Dabiran, Peter Chow

Proceedings Volume 6121, 61210F (2006) https://doi.org/10.1117/12.657894

KEYWORDS: Stereolithography, Modulation, Gallium, Polarization, Doping, Gallium nitride, Superlattices, Aluminum, Indium gallium nitride, Ionization

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Proceedings Article | 28 February 2006 Paper

Development of ZnMgCdO-based alloys and heterostructures for optical applications

Michael Gerhold, Andrei Osinsky, David Look

Proceedings Volume 6127, 61271B (2006) https://doi.org/10.1117/12.643144

KEYWORDS: Cadmium, Zinc, Zinc oxide, Magnesium, X-ray diffraction, Light emitting diodes, Quantum wells, Heterojunctions, Luminescence, Optical properties

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Proceedings Article | 14 April 1999 Paper

InGaN blue light-emitting diodes with optimized n-GaN layer

Ivan Eliashevich, Yuxin Li, Andrei Osinsky, Chuong Tran, Michael Brown, Robert Karlicek

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344483

KEYWORDS: Light emitting diodes, Gallium nitride, Resistance, Doping, Indium gallium nitride, Semiconducting wafers, Reliability, Diodes, Blue light emitting diodes, Metals

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Showing 5 of 14 publications

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