Mr. Andres C. Chavez Profile

Andres C. Chavez

at UCLA Samueli School of Engineering

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Proceedings Article | 22 March 2018 Paper

Modeling the effects of strain profiles and defects on precessional magnetic switching in multiferroic heterostructures

Andres Chavez, Auni Kundu, Christopher Lynch, Gregory Carman

Proceedings Volume 10596, 1059622 (2018) https://doi.org/10.1117/12.2296699

KEYWORDS: Magnetism, Anisotropy, Switching, Electrodes, Ferroelectric materials, Motion models, Finite element methods, Thin films

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Strain-mediated multiferroic heterostructures relying on fast 180° precessional magnetic switching have been proposed as a pathway for energy efficient and high density memory/logic devices. However, proper device performance requires precisely timed high frequency (~GHz) voltage pulses dependent on the magnetization dynamics of the structure. In turn, the dynamic response of the device is greatly influenced by the device geometry, strain amplitude, and strain rate. Hence, we study the effects of increasing the voltage amplitude and application rate on the in-plane magnetization dynamics of a single-domain CoFeB ellipse (100 nm x 80 nm x 6 nm) on a 500 nm thick PZT substrate in addition to studying defects in the geometry. Both a coupled micromagnetics, electrostatics and elastodynamics finite element model and a conventional micromagnetics software was used to study the strain-induced magnetic response of the CoFeB ellipse. Both models predict increased 90° magnetic reorientation speed with increased strain amplitude and rate. However, the fully-coupled model predicts slower reorientation and incoherency in comparison to the uncoupled model. This occurs because the fully-coupled model can capture the expected strain gradients of a fabricated device while the micromagnetics model can only represent uniform strain states. Additional studies which introduce geometric defects result in faster precessional motion under the same strain amplitude and rate. This is attributed to localized changes in the magnetization that influence neighboring regions via exchange and demagnetization effects. The results of these studies can help design better devices that will be less sensitive to defects and voltage applications for future strain-mediated multiferroic devices.

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