Mr. Anthony D. Vacca Profile

Anthony D. Vacca

VP and General Manager at AVI-Photomask

SPIE Involvement:

Author

Publications (31)

Proceedings Article | 21 April 2016 Paper

Improving reticle defect disposition via fully automated lithography simulation

Raunak Mann, Eliot Goodman, Keith Lao, Steven Ha, Anthony Vacca, Peter Fiekowsky, Dan Fiekowsky

Proceedings Volume 9778, 97783U (2016) https://doi.org/10.1117/12.2230847

KEYWORDS: Reticles, Semiconducting wafers, Inspection, Photomasks, Scanners, Lithography, Optical proximity correction, Feature extraction, Databases, Critical dimension metrology, Defect inspection

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Most advanced wafer fabs have embraced complex pattern decoration, which creates numerous challenges during in-fab reticle qualification. These optical proximity correction (OPC) techniques create assist features that tend to be very close in size and shape to the main patterns as seen in Figure 1. A small defect on an assist feature will most likely have little or no impact on the fidelity of the wafer image, whereas the same defect on a main feature could significantly decrease device functionality. In order to properly disposition these defects, reticle inspection technicians need an efficient method that automatically separates main from assist features and predicts the resulting defect impact on the wafer image. Analysis System (ADAS) defect simulation system[1]. Up until now, using ADAS simulation was limited to engineers due to the complexity of the settings that need to be manually entered in order to create an accurate result. A single error in entering one of these values can cause erroneous results, therefore full automation is necessary. In this study, we propose a new method where all needed simulation parameters are automatically loaded into ADAS. This is accomplished in two parts. First we have created a scanner parameter database that is automatically identified from mask product and level names. Second, we automatically determine the appropriate simulation printability threshold by using a new reference image (provided by the inspection tool) that contains a known measured value of the reticle critical dimension (CD). This new method automatically loads the correct scanner conditions, sets the appropriate simulation threshold, and automatically measures the percentage of CD change caused by the defect. This streamlines qualification and reduces the number of reticles being put on hold, waiting for engineer review. We also present data showing the consistency and reliability of the new method, along with the impact on the efficiency of in-fab reticle qualification.

Proceedings Article | 23 October 2015 Paper

Automatic classification and defect verification based on inspection technology with lithography simulation

Masaya Kato, Hideki Inuzuka, Takeshi Kosuge, Shingo Yoshikawa, Kayoko Kanno, Hidemichi Imai, Hiroyuki Miyashita, Anthony Vacca, Peter Fiekowsky, Dan Fiekowsky

Proceedings Volume 9635, 96351W (2015) https://doi.org/10.1117/12.2197814

KEYWORDS: Photomasks, Inspection, Critical dimension metrology, Opacity, Lithography, Semiconducting wafers, Source mask optimization, Reticles, Optical proximity correction, Bridges

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Proceedings Article | 20 October 2014 Paper

Increasing reticle inspection efficiency and reducing wafer printchecks at 14nm using automated defect classification and simulation

Shazad Paracha, Eliot Goodman, Benjamin Eynon, Ben Noyes, Steven Ha, Jong-Min Kim, Dong-Seok Lee, Dong-Heok Lee, Sang-Soo Cho, Young Ham, Anthony Vacca, Peter Fiekowsky, Daniel Fiekowsky

Proceedings Volume 9235, 92350Q (2014) https://doi.org/10.1117/12.2070256

KEYWORDS: Inspection, Reticles, Semiconducting wafers, Photomasks, Bridges, Modulation, Lithography, Scanning electron microscopy, Classification systems, Polarization

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Proceedings Article | 2 April 2014 Paper

Improved reticle requalification accuracy and efficiency via simulation-powered automated defect classification

Shazad Paracha, Benjamin Eynon, Ben Noyes, Anthony Nhiev, Anthony Vacca, Peter Fiekowsky, Dan Fiekowsky, Young Mog Ham, Doug Uzzel, Michael Green, Susan MacDonald, John Morgan

Proceedings Volume 9050, 905031 (2014) https://doi.org/10.1117/12.2048622

KEYWORDS: Reticles, Semiconducting wafers, Inspection, Photomasks, Classification systems, Scanning electron microscopy, Critical dimension metrology, Error analysis, Wafer testing, Defect detection

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Proceedings Article | 1 October 2013 Paper

Increasing reticle inspection efficiency and reducing wafer print-checks using automated defect classification and simulation

Sung Jae Ryu, Sung Taek Lim, Anthony Vacca, Peter Fiekowsky, Dan Fiekowsky

Proceedings Volume 8880, 88800D (2013) https://doi.org/10.1117/12.2028275

KEYWORDS: Inspection, Reticles, Semiconducting wafers, Photomasks, Contamination, Lithography, Defect inspection, Inspection equipment, Scanners, Yield improvement

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Proceedings Article | 8 November 2012 Paper

Bridging the gaps between mask inspection/review systems and actual wafer printability using computational metrology and inspection (CMI) technologies

Linyong Pang, Vikram Tolani, Masaki Satake, Peter Hu, Danping Peng, Tingyang Liu, Dongxue Chen, Bob Gleason, Anthony Vacca

Proceedings Volume 8522, 85220Z (2012) https://doi.org/10.1117/12.977176

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Scanners, Fiber optic illuminators, Metrology, Source mask optimization, Image resolution, SRAF, Inverse optics

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Proceedings Article | 19 May 2008 Paper

Model-based mask verification on critical 45nm logic masks

F. Sundermann, F. Foussadier, T. Takigawa, J. Wiley, A. Vacca, L. Depre, G. Chen, S. Bai, J.-S. Wang, R. Howell, V. Arnoux, K. Hayano, S. Narukawa, S. Kawashima, H. Mohri, N. Hayashi, H. Miyashita, Y. Trouiller, F. Robert, F. Vautrin, G. Kerrien, J. Planchot, C. Martinelli, J. L. Di-Maria, V. Farys, B. Vandewalle, L. Perraud, J. C. Le Denmat, A. Villaret, C. Gardin, E. Yesilada, M. Saied

Proceedings Volume 7028, 70280U (2008) https://doi.org/10.1117/12.793037

KEYWORDS: Photomasks, Semiconducting wafers, Bridges, Scanning electron microscopy, Critical dimension metrology, Process modeling, Optical proximity correction, Reticles, Model-based design, Logic

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Proceedings Article | 19 May 2008 Paper

Model based short range mask process correction

G. Chen, J.-S. Wang, S. Bai, R. Howell, J. Wiley, A. Vacca, T. Kurosawa, T. Nishibe, T. Takigawa

Proceedings Volume 7028, 70280G (2008) https://doi.org/10.1117/12.793024

KEYWORDS: Photomasks, Process modeling, Optical proximity correction, Calibration, Scanning electron microscopy, Head, Manufacturing, Cadmium, Sensors, Error analysis

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Proceedings Article | 1 November 2007 Paper

Model-based mask verification

Frank Foussadier, Frank Sundermann, Anthony Vacca, Jim Wiley, George Chen, Tadahiro Takigawa, Katsuya Hayano, Syougo Narukawa, Satoshi Kawashima, Hiroshi Mohri, Naoya Hayashi, Hiroyuki Miyashita, Y. Trouiller, F. Robert, F. Vautrin, G. Kerrien, J. Planchot, C. Martinelli, J.L. Di-Maria, Vincent Farys

Proceedings Volume 6730, 673051 (2007) https://doi.org/10.1117/12.752609

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Semiconducting wafers, Process modeling, Critical dimension metrology, Lithography, Model-based design, Wafer-level optics, Scanning electron microscopy

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Proceedings Article | 6 December 2004 Paper

Comprehensive defect detection featuring die-to-database reflected light inspection

Anthony Vacca, Darren Taylor

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.570529

KEYWORDS: Inspection, Reticles, Defect detection, Manufacturing, Image quality, Defect inspection, Modulation, Photomasks, Lithography, Databases

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Proceedings Article | 6 December 2004 Paper

Chromeless phase lithography reticle defect inspection challenges and solutions

Larry Zurbrick, Anthony Vacca, Byran Reese, Douglas Van Den Broeke, Stephen Hsu, Darren Taylor, Bryan Kasprowicz

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569287

KEYWORDS: Inspection, Reticles, Manufacturing, Photomasks, Etching, Defect detection, Lithography, Quartz, Sensors, Resolution enhancement technologies

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Proceedings Article | 2 June 2003 Paper

A new methodology to specify via and contact layer reticles for maximizing process latitude

Kirk Strozewski, Joe Perez, Anthony Vacca, Arthur Klaum, Keith Brankner

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485024

KEYWORDS: Reticles, Inspection, Semiconducting wafers, Photomasks, Defect detection, Detection and tracking algorithms, Scanning electron microscopy, Wafer inspection, Optical lithography, Manufacturing

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Proceedings Article | 27 December 2002 Paper

Inspection of laser-written reticles for the 90-nm node

Anthony Vacca, Mohsen Ahmadian, Jerry Chen, Franklin Kalk

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467916

KEYWORDS: Inspection, Photomasks, Databases, Semiconducting wafers, Reticles, Image filtering, Electron beams, Lithography, Optical proximity correction, Optical filters

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Proceedings Article | 16 August 2002 Paper

Measuring and assessing printability of reticle pinhole defects

Darren Taylor, Anthony Vacca, Larry Zurbrick, William Broadbent, Peter Fiekowsky

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479355

KEYWORDS: Reticles, Scanning electron microscopy, Inspection, Semiconducting wafers, Manufacturing, Photomasks, Metrology, Inspection equipment, Calibration, Optics manufacturing

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Proceedings Article | 1 August 2002 Paper

Improved method for measuring and assessing reticle pinhole defects for the 100-nm lithography node

Darren Taylor, Anthony Vacca, Larry Zurbrick

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476917

KEYWORDS: Scanning electron microscopy, Reticles, Photomasks, Inspection, Lithography, Semiconducting wafers, Metrology, Printing, Inspection equipment, Lithographic illumination

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Proceedings Article | 11 March 2002 Paper

ArF (193-nm) alternating aperture PSM quartz defect repair and printability for 100-nm node

Jerry Chen, John Riddick, Matt Lamantia, Azeddine Zerrade, Robert Henderson, Greg Hughes, Cyrus Tabery, Khoi Phan, Chris Spence, Amy Winder, William Stanton, Eugene Delarosa, John Maltabes, Cecilia Philbin, Lloyd Litt, Anthony Vacca, Scott Pomeroy

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458362

KEYWORDS: Quartz, Photomasks, Semiconducting wafers, Scanning electron microscopy, Etching, Atomic force microscopy, Ions, Reticles, Inspection, Critical dimension metrology

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Proceedings Article | 11 March 2002 Paper

Improved method for measuring and assessing reticle pinhole defects

Darren Taylor, Anthony Vacca, Larry Zurbrick, William Howard, William Broadbent

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458300

KEYWORDS: Reticles, Scanning electron microscopy, Inspection, Semiconducting wafers, Manufacturing, Metrology, Lithography, Scanners, Photomasks, Wafer inspection

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Proceedings Article | 22 January 2001 Paper

Evaluation of a multiple-beam defect inspection platform using an integrated reference mask

Jerry Chen, Franklin Kalk, Anthony Vacca, Scott Pomeroy, Jordan Carroll

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410744

KEYWORDS: Inspection, Photomasks, Reticles, Optical proximity correction, Defect inspection, Standards development, Ultraviolet radiation, Computing systems, Defect detection, Detection and tracking algorithms

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Proceedings Article | 3 February 2000 Paper

Improving reticle yields with after develop inspection (ADI)

Franklin Kalk, Keith Brankner, Laurie Peters, Anthony Vacca, Scott Pomeroy, David Emery

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377117

KEYWORDS: Inspection, Chromium, Etching, Dry etching, Scanning electron microscopy, Photomasks, Modulation, Reflectivity, Wet etching, Detection and tracking algorithms

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Proceedings Article | 3 February 2000 Paper

Advanced CD error detection with CD SEM disposition

Darren Taylor, Barry Rockwell, Aihua Dong, Anthony Vacca, Waiman Ng, Geoffrey Anderson, William Howard

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377115

KEYWORDS: Reticles, Inspection, Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Photomasks, Optical metrology, Electrons, Ultraviolet radiation, Calibration

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Proceedings Article | 30 December 1999 Paper

Techniques to detect and analyze photomask CD uniformity errors

Anthony Vacca, Waiman Ng, Geoffrey Anderson, Barry Rockwell, Aihua Dong, Darren Taylor

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373316

KEYWORDS: Photomasks, Critical dimension metrology, Inspection, Reticles, Error analysis, Semiconducting wafers, Scanning electron microscopy, Manufacturing, Metrology, Lithography

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Proceedings Article | 30 December 1999 Paper

Dry etch yield enhancement by use of after-develop inspection

Franklin Kalk, Keith Brankner, Lori Peters, Anthony Vacca, Scott Pomeroy, David Emery

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373306

KEYWORDS: Etching, Inspection, Chromium, Dry etching, Photomasks, Modulation, Reflectivity, Wet etching, Detection and tracking algorithms, Scanning electron microscopy

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Proceedings Article | 23 April 1999 Paper

Characterization of inspection sensitivity on advanced OPC reticles

Larry Zurbrick, Joseph Straub, Anthony Vacca

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346219

KEYWORDS: Optical proximity correction, Inspection, Photomasks, Reticles, Defect inspection, Defect detection, Detection and tracking algorithms, Semiconducting wafers, Scanning electron microscopy, Visualization

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Proceedings Article | 18 December 1998 Paper

Defect inspection capability for advanced OPC photomasks

Joseph Straub, Anthony Vacca, Larry Zurbrick

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332850

KEYWORDS: Optical proximity correction, Reticles, Defect inspection, Inspection, Photomasks, Defect detection, Manufacturing, Scanning electron microscopy, Semiconducting wafers, Inspection equipment

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Proceedings Article | 1 September 1998 Paper

100-nm defect detection using an existing image acquistion system

Anthony Vacca, Benjamin Eynon, Steve Yeomans

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328857

KEYWORDS: Semiconducting wafers, Reticles, Photomasks, Critical dimension metrology, Inspection, Defect detection, Prototyping, Detection and tracking algorithms, Databases, Manufacturing

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Proceedings Article | 29 June 1998 Paper

Killer defects caused by localized sub-100-nm critical dimension reticle errors

Anthony Vacca, Benjamin Eynon, Steve Yeomans

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310795

KEYWORDS: Semiconducting wafers, Reticles, Ruthenium, Photomasks, Critical dimension metrology, Inspection, Prototyping, Detection and tracking algorithms, Chlorine, Databases

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For obvious cost reasons, semiconductor manufacturers are constantly striving to produce ever smaller wafer geometries with the current installed base of wafer steppers. Many techniques (phase shifting, optical proximity correction, etc.) have been used successfully to 'squeeze' more resolution from these steppers than was once thought possible. Wafers processed using non-aggressive k₁ factors provided a linear correlation between mask and wafer feature sizes. However, it has been shown that pushing k₁ factors to very low levels causes a nonlinear response between changes in photomask and wafer critical dimension. This non-linearity demands extremely tight photomask CD control specifications. Total CD errors 50 nm and smaller can cause unacceptable wafer CD variation. Current high end reticle manufacturers are capable of meeting a total CD uniformity specification of approximately 40 nm as measured by sampling strategies using optical metrology tools. These tools are very useful for detecting macro changes in CD; however, they will only detect a localized error if it happens to occur precisely at the point of measurement. In contrast, a pattern inspection system employing a linewidth measurement algorithm can ensure detection of all localized errors within the detection and review capability of the system. The problem with reticle CD error detection capability is that there is a large discrepancy between currently available detection of greater than or equal to 150 nm and required detection of less than or equal to 50 nm necessary for proper wafer functionality at low k₁ lithography. In this paper, defect sensitivity and false detection performance of a new advanced line measurement algorithm was tested. The test vehicles included both an industry standard and a custom designed programmed defect test mask. In addition, production masks with naturally occurring localized CD errors that caused wafer pattern bridging were analyzed. This new experimental algorithm has shown localized CD error detection of less than or equal to 100 nm reticle defects.

Proceedings Article | 28 July 1997 Paper

Characterization of an advanced performance reticle defect inspection algorithm

James Wiley, Christopher Aquino, Douglas Burnham, Anthony Vacca

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277285

KEYWORDS: Inspection, Reticles, Optical proximity correction, Photomasks, Algorithm development, Detection and tracking algorithms, Defect inspection, Defect detection, Databases, Semiconducting wafers

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Proceedings Article | 12 February 1997 Paper

100-nm defect detection using an existing image acquisition system

Anthony Vacca, Benjamin Eynon, Steve Yeomans

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301193

KEYWORDS: Semiconducting wafers, Reticles, Critical dimension metrology, Photomasks, Inspection, Prototyping, Defect detection, Detection and tracking algorithms, Image acquisition, Lithography

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For obvious cost reasons, semiconductor manufacturers are constantly striving to produce ever smaller wafer geometries with the current installed base of wafer steppers. Many techniques (phase shifting, optical proximity correction, etc.) have been used successfully to 'squeeze' more resolution from these steppers than was once thought possible. Wafers processed using non-aggressive k₁ factors provided a linear correlation between mask and wafer feature sizes. However, it has been shown that pushing k₁ factors to very low levels causes a nonlinear response between changes in photomask and wafer critical dimension. This non-linearity demands extremely tight photomask CD control specifications. Total CD errors 50 nm and smaller can cause unacceptable wafer CD variation. Current high end reticle manufacturers are capable of meeting a total CD uniformity specification of approximately 40 nm as measured by sampling strategies using optical metrology tools. These tools are very useful for detecting macro changes in CD; however, they will only detect a localized error if it happens to occur precisely at the point of measurement. In contrast, a pattern inspection system employing a linewidth measurement algorithm can ensure detection of all localized errors within the detection and review capability of the system. The problem with reticle CD error detection capability is that there is a large discrepancy between currently available detection of greater than or equal to 150 nm and required detection of less than or equal to 50 nm necessary for proper wafer functionality at low k₁ lithography. In this paper, defect sensitivity and false detection performance of a new advanced line measurement algorithm was tested. The test vehicles included both an industry standard and a custom designed programed defect test mask. In addition, production masks with naturally occurring localized CD errors that caused wafer pattern bridging were analyzed. This new experimental algorithm has shown localized CD error detection of less than or equal to 100 nm reticle defects.

Proceedings Article | 27 December 1996 Paper

Pinhole defect detection and printability prediction

Franklin Kalk, Anthony Vacca, Peter Radcliff

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262797

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Distortion, Microscopes, Defect detection, Deep ultraviolet, Scanning electron microscopy, Photoresist processing, Visualization

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