Proceedings Article | 8 September 2005
Kenneth Goldberg, Patrick Naulleau, Senajith Rekawa, Paul Denham, J. Liddle, Eric Gullikson, Keith Jackson, Erik Anderson, John Taylor, Gary Sommargren, Henry Chapman, Donald Phillion, Michael Johnson, Anton Barty, Regina Soufli, Eberhard Spiller, Christopher Walton, Sasa Bajt
Proc. SPIE. 5900, Optics for EUV, X-Ray, and Gamma-Ray Astronomy II
KEYWORDS: Light sources, X-ray optics, Lenses, X-rays, Interferometry, Optical testing, Extreme ultraviolet, Astronomical imaging, X-ray astronomy, EUV optics
Since 1993, research in the fabrication of extreme ultraviolet (EUV) optical imaging systems, conducted at Lawrence Berkeley National Laboratory (LBNL) and Lawrence Livermore National Laboratory (LLNL), has produced the highest resolution optical systems ever made. We have pioneered the development of ultra-high-accuracy optical testing and alignment methods, working at extreme ultraviolet wavelengths, and pushing wavefront-measuring interferometry into the 2-20-nm wavelength range (60-600 eV). These coherent measurement techniques, including lateral shearing interferometry and phase-shifting point-diffraction interferometry (PS/PDI) have achieved RMS wavefront measurement accuracies of 0.5-1-Å and better for primary aberration terms, enabling the creation of diffraction-limited EUV optics. The measurement accuracy is established using careful null-testing procedures, and has been verified repeatedly through high-resolution imaging. We believe these methods are broadly applicable to the advancement of short-wavelength optical systems including space telescopes, microscope objectives, projection lenses, synchrotron beamline optics, diffractive and holographic optics, and more. Measurements have been performed on a tunable undulator beamline at LBNL's Advanced Light Source (ALS), optimized for high coherent flux; although many of these techniques should be adaptable to alternative ultraviolet, EUV, and soft x-ray light sources. To date, we have measured nine prototype all-reflective EUV optical systems with NA values between 0.08 and 0.30 (f/6.25 to f/1.67). These projection-imaging lenses were created for the semiconductor industry's advanced research in EUV photolithography, a technology slated for introduction in 2009-13. This paper reviews the methods used and our program's accomplishments to date.
