Integrated photonics features applications in high-speed telecommunication, computing, and sensing. These devices are ultimately limited by the optical loss occurring in the waveguide structures. One of its primary sources is surface-roughness- induced scattering and bend-losses. Surface roughness is unavoidably introduced during deposition, mainly during etching and lithographic steps. In photonic integrated circuits, tight bends enable a compact footprint yet increase the mode mismatch loss , radiation loss and scattering loss. Previously, the bend losses were estimated from a parametric model. However, it lacks flexibility w.r.t. the waveguide platform. We apply a recently developed model of the surface-roughness-induced scattering in guided-mode systems to substantiate the dependence of the scattering loss on the bend-radius for waveguides based on a silicon nitride platform. The model incorporates the surface roughness via its autocorrelation. Further, it inherently considers the overlap of the modes with the roughness. As waveguide material, we used both plasma-enhanced CVD silicon nitride as a low-temperature, back-end-compatible process, and low-pressure CVD silicon nitride, as a high-temperature frontend process. As bottom and top cladding, we deposited high-density plasma (HDP) and sputtered silicon oxide, respectively. The latter offers flexibility to adapt the platform for sensing purposes. We evaluate different waveguide widths, bend radii, and wavelengths in the visible and near-infrared ranges. We set the observed propagation losses into context with estimated absorption, scattering, and mode-overlap loss sources and point to their shifting importance at the measured wavelengths. We believe that this model allows to increase our knowledge about the various aspects of loss in guided mode systems and predict the propagation loss based on foregoing absorption and roughness measurements.
Micro-ring resonators (MRR) are basic photonic components, which serve as crucial building blocks for a variety of devices, e.g. integrated sensors, external cavity lasers, and high speed photonic data transmitters. Silicon nitride photonic platforms are particularly appealing in this field of application, since this waveguide material enables on-chip photonic circuitry with (ultra-) low losses in the NIR as well as across the whole visible spectral range. In this contribution we investigate key performance properties of MRRs in the wavelength range around 850 nm, such as free spectral range (FSR), quality factor (Q factor) and extinction ratio. We systematically investigate a large parameter space given by the MRR radii, coupling gaps between ring and bus waveguide, as well as waveguide width. Furthermore, we compare key properties such as the Q factor between low pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) Si3N4 platforms and find enhanced values for LPCVD ring resonators reaching nearly a Q factor of 106.The fabrication is carried out with standard CMOS foundry equipment, utilizing photolithography and reactive ion etching on 250 nm thick silicon nitride films. As cladding material, high density PECVD silicon oxide is deposited prior to the waveguide onto bare silicon and a sputtered oxide serves as upper cladding. With this process toolbox full CMOS backend compatibility is achieved when considering only PECVD Si3N4 waveguide material. In terms of manufacturability, special focus is put on the die-to-die as well as on wafer-to-wafer variability of the performance parameters, which is crucial when considering mass production of MRR devices. Finally, the experimental findings are compared to finite difference time domain (FDTD) simulations of the MRR circuits revealing excellent agreement when considering the manufacturing variability.
Optical sensors that utilize the evanescent field of an integrated waveguide are applied in a wide range of applications. Recently, evanescent field particle detectors based on dielectric strip waveguides were success- fully used for the detection of small particles (0 < 1 μm). We present optimizations of silicon nitride slab and strip waveguides based on numerical simulations, which maximize the evanescent field that interacts with the analyte such as particles. The fraction of the total light power that is transmitted in the evanes- cent region can be tuned by geometric parameters of the waveguide and the operation wavelength. We show that the optimum height of the slab waveguide scales linearly with the operation wavelength, which is in agreement with analytic results from literature. Moreover, linear correlations between the optimum waveguide geometry and wavelength could be derived for silicon nitride strip waveguides that are utilized for particle detection. The results for the optimum strip waveguide geometry are dependent on the target particle size. The derived geometries represent the optimum configuration for an evanescent field particle detector based on silicon nitride strip waveguides in order to exploit its full potential in terms of detection sensitivity. Enhanced sensitivities will be necessary to extend the detection range of evanescent field particle detectors down to small particles in the ultrafine regime (o≤ 100 nm).
Detecting and classifying particles over a wide range of types and sizes is essential for precise air quality determination. In this study the use of optical waveguide-based particle detection is examined using finite element method (FEM) based simulations. The simulation model assumes a silicon nitride strip waveguide and is built up in 3D using the Comsol Multiphysics platform. The waveguide geometry parameters were varied to identify suitable geometries for single-mode wave guidance of the fundamental quasi-TE and quasi-TM modes. The geometries with their according effective wave indices are reported. Furthermore, the intensity and phase changes of the single-mode wave introduced by the presence of a particle are analyzed und the underlying physical effects are discussed for spherical particles of radii from 50 to 500 nm. The results show non-linear and non-monotonic behavior and give substantial input to understand basic particle interaction with waveguide structures. Furthermore, they provide helpful knowledge for designing waveguide-based particle detectors.
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