Dr. Anton K. Gutakovskii Profile

Dr. Anton K. Gutakovskii

at AV Rzhanov Institute of Semiconductor Physics

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Author

Publications (8)

Proceedings Article | 4 January 2019 Paper

Embedding of iron silicide nanocrystals into monocrystalline silicon: suppression of emersion effect

Evgeniy Chusovitin, Dmitry Goroshko, Sergey Dotsenko, Alexander Shevlyagin, Anton Gutakovskii, Nikolay Galkin

Proceedings Volume 11024, 1102402 (2019) https://doi.org/10.1117/12.2314675

KEYWORDS: Silicon, Iron, Nanocrystals, Transmission electron microscopy, Interfaces, Solid phase epitaxy

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Proceedings Article | 10 June 2006 Paper

Ge nanoclusters in GeO2: formation and optical properties

E. Gorokhov, V. Volodin, D. Marin, M. Efremov, A. Cherkov, A. Gutakovskii, V. Shvets, A. Borisov

Proceedings Volume 6260, 626010 (2006) https://doi.org/10.1117/12.683295

KEYWORDS: Germanium, Nanocrystals, Raman spectroscopy, Oxides, Luminescence, Signal detection, Heterojunctions, Diffusion, Optical properties, Raman scattering

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Proceedings Article | 10 June 2006 Paper

Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on Si02 films

A. Dvurechenskii, P. Novikov, Y. Khang, Zh. Smagina, V. Armbrister, V. Kesler, A. Gutakovskii

Proceedings Volume 6260, 626006 (2006) https://doi.org/10.1117/12.676916

KEYWORDS: Germanium, Ion beams, Chemical analysis, Atomic force microscopy, Silicon, Semiconducting wafers, Ions, Spectroscopy, Electron microscopy, Oxidation

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Proceedings Article | 28 May 2004 Paper

Surface morphology transitions induced by ion beam action during Ge/Si MBE

Anatoly Dvurechenskii, J. Smagina, V. Zinovyev, V. Armbrister, S. Teys, A. Gutakovskii

Proceedings Volume 5401, (2004) https://doi.org/10.1117/12.558329

KEYWORDS: Germanium, Ion beams, Ions, Heteroepitaxy, Silicon, Monte Carlo methods, Diffusion, Scanning tunneling microscopy, 3D modeling, Backscatter

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Proceedings Article | 14 April 2003 Paper

Formation of InAs quantum dots in an aluminium oxide matrix by lateral selective wet oxidation

D. Tenne, O. Bajutova, A. Bakarov, Aleksandr Toropov, A. Milekhin, V. Haisler, Dietrich Zahn, A. Gutakovsky

Proceedings Volume 5065, (2003) https://doi.org/10.1117/12.502292

KEYWORDS: Indium arsenide, Phonons, Oxides, Aluminum, Raman spectroscopy, Crystals, Quantum dots, Gallium arsenide, Laser energy, Oxidation

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Proceedings Article | 14 April 2003 Paper

Status of molecular beam epitaxy of CdxHg1-xTe

A. Antsiferov, L. Burdina, Vasily Varavin, A. Gutakovsky, Sergey Dvoretsky, V. Kartashev, Nikolay Mikhailov, D. Pridachin, V. Remesnik, S. Rykhlitskii, I. Sabinina, Yuri Sidorov, E. Spesivtsev, V. Titov, V. Shvets, M. Yakushev, Alexander Aseev

Proceedings Volume 5065, (2003) https://doi.org/10.1117/12.502290

KEYWORDS: Hassium, Silicon, Gallium arsenide, Control systems, Tellurium, Process control, Photodiodes, Interfaces, Molecular beam epitaxy, Molecular beams

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Proceedings Article | 29 May 2002 Paper

Formation of Si nanocrystals in a-Si films using excimer laser

Vladimir Volodin, M. Efremov, V. Bolotov, A. Kretinin, S. Kochubei, A. Gutakovskii, L. Fedina

Proceedings Volume 4748, (2002) https://doi.org/10.1117/12.468989

KEYWORDS: Nanocrystals, Raman spectroscopy, Silicon, Amorphous silicon, Excimer lasers, Crystals, Raman scattering, Glasses, Polarization, Laser crystals

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Proceedings Article | 10 August 2001 Paper

Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures

Irina Antonova, Vladimir Popov, Jadwiga Bak-Misiuk, J. Domagala, Andrzej Misiuk, V. Obodnikov, A. Gutakovskii, A. Romano-Rodriguez

Proceedings Volume 4412, (2001) https://doi.org/10.1117/12.435812

KEYWORDS: Silicon, Hydrogen, Crystals, Annealing, Argon, Diffraction, Ions, Interfaces, Laser crystals, Reflection

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Showing 5 of 8 publications

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