Dr. Anuj Bhatnagar Profile

Dr. Anuj Bhatnagar

Scientist at Sameer

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Publications (6)

Proceedings Article | 20 February 2017 Paper

A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers

Akshay Balgarkashi, Mahitosh Biswas, Sandeep Singh, Debabrata Das, Anuj Bhatnagar, Roshan Makkar, Nilesh Shinde, Subhananda Chakrabarti

Proceedings Volume 10114, 1011412 (2017) https://doi.org/10.1117/12.2251290

KEYWORDS: Quantum dots, Indium arsenide, Annealing, Optical properties, Convolution, Nitrogen, Indium, Gallium arsenide, Heterojunctions, Luminescence

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Proceedings Article | 20 February 2017 Paper

Low-temperature photoluminescence studies in epitaxially-grown GaAsN/InAs/GaAsN quantum-dot-in-well structures emitting at 1.31 um

A. Balgarkashi, M. Biswas, S. Singh, D. Das, N. Shinde, R. Makkar, A. Bhatnagar, S. Chakrabarti

Proceedings Volume 10114, 101140Q (2017) https://doi.org/10.1117/12.2250527

KEYWORDS: Luminescence, Annealing, Nitrogen, Laser communications, Gallium arsenide, Crystals, Indium arsenide, Quantum wells, Indium gallium arsenide, Optical properties

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Proceedings Article | 27 January 2017 Paper

A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum-wells

M. Biswas, A. Balgarkashi, S. Singh, N. Shinde, R. Makkar, A. Bhatnagar, Subhananda Chakrabarti

Proceedings Volume 10111, 1011139 (2017) https://doi.org/10.1117/12.2251981

KEYWORDS: Gallium arsenide, Optical properties, Chemical species, Homogenization, Quantum wells, Interfaces, Luminescence, Annealing, Nitrogen, Satellites

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Proceedings Article | 16 September 2016 Paper

Impact of rapid thermal annealing on dilute nitride (GaAsN) capped InAs/GaAs quantum dots exhibiting optical emission beyond ~1.5 µm

M. Biswas, A. Balgarkashi, S. Singh, N. Shinde, R. Makkar, A. Bhatnagar, Subhananda Chakrabarti

Proceedings Volume 9919, 991914 (2016) https://doi.org/10.1117/12.2237616

KEYWORDS: Annealing, Gallium arsenide, Quantum dots, Indium arsenide, Nitrogen, Quantum optics, Thermography, Molecular self-assembly, Optical properties, Diffusion

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Proceedings Article | 10 January 2005 Paper

Variable-width arrayed waveguide demultiplexer on X-cut lithium niobate

Anuj Bhatnagar, Jyothi Digge, Mahesh Sinha

Proceedings Volume 5623, (2005) https://doi.org/10.1117/12.577986

KEYWORDS: Waveguides, Demultiplexers, Wave propagation, Lithium niobate, Dense wavelength division multiplexing, Diffraction, Dispersion, Broadband telecommunications, Optical networks, Beam propagation method

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A new arrayed wave-guide demultiplexer is proposed on Proton exchanged X-cut-Y propagating Lithium-niobate substrate. The device simulation is performed at 1550nm central wave length. The simulation is carried out using Optiwave 5.O based on the beam propagation method.and uses effective index method for calculating the propagation constant b.This novel device differs from the conventional AWG MUX/DEMUX. The width of the wave-guides in the array section is varied from 2.5µm to 4.0µm with a step size of 0.1µm keeping the length of all array wave-guides equal. This contributes to the dispersion effect. The small 's' bend. sections are used at the i/p and the o/p array aperture. The dispersive effect at the i/p and o/p bend section is negligible. Hence the dispersion of the Phasar is mainly due to the increase in the width of the wave-guides in the array section. One of the merits of the device is the use of the variable Width wave-guides for controlling the effective index of the wave-guides in the array, which makes the device compact and reduces the optical propagation losses. In the conventional arrayed wave guide DWDM MUX/DEMUX the increase in the channel count Increases the cross talk that can be minimized by increasing the number of wave-guides in the array section, resulting in a complex structure. In the proposed device the spacing between the wave guides in the array section can be easily controlled by the “s” bend sections which in turn minimizes the cross talk [intra channel] without increasing the number of wave-guides in the array structure which limits the phase error. As the device is Lithium niobate based, which exhibits an excellent electro optic behavior, the device can be made tunable contributing to the rapid development of high speed Broadband optical networks such as fiber to the home and Broadband optical networks such as fiber to the home and DWDM, apart from using it as a dynamic switching device.The simulated results at l=1550nm for X- cut Y propagating proton exchanged wave guide {PHASAR} for TE polarized light depicts the free spectral range in the order of THz. The simulation was performed for 4-channel demultiplexer having a channel spacing of 200GHz. Due to the strong confinement in the array wave-guide structure, the field profile at the focusing point in the image plane maintains its shape. The modal field is assumed to be Gaussian and all the measurements are performed at (FWHM). The device has low diffraction order although it is used for broadband optical communication network This results in a low diffraction loss at the central channel. An attempt is made in the design to keep the focal field at the o/p a replica of the modal field at the i/p by choosing the symmetric I/P & O/P MMI coupler and the wave-guides. The non-uniformity is kept minimum by the optimization of position of the waveguides in the i/p and the o/p array aperture apart from using linear tapers at the i/p and o/p.

Proceedings Article | 25 September 2001 Paper

Fabrication and packaging of 1X8 power splitter/combiner in BK-7 glass at 1.31/1.55-um wavelength

C. Jayakrishnan, Alok Verma, S. Debbarma, Umesh Hivarkar, Roshan Makkar, A. Bhatnagar, K. Chalapathi

Proceedings Volume 4417, (2001) https://doi.org/10.1117/12.441306

KEYWORDS: Packaging, Optical fabrication, Ion exchange, Glasses, Optical testing, Semiconducting wafers, Waveguides, Optical alignment, Integrated optics, Waveguide modes

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