Dr. Apo Sezginer Profile

Dr. Apo Sezginer

Sr. Director at KLA Corp

SPIE Involvement:

Author

Publications (23)

Proceedings Article | 16 October 2017 Paper

Process window discovery from mask inspection for hotspot analysis and verification

James Cheng, William Chou, C. Twu, Hsin-Fu Chou, Jackie Cheng, Colbert Lu, Heng-Jen Lee, Bosheng Zhang, Mehdi Daneshpanah, Apo Sezginer, David Wu, Mike Yeh, Albert Chien

Proceedings Volume 10451, 104510X (2017) https://doi.org/10.1117/12.2281215

KEYWORDS: Photomasks, Inspection, Scanning electron microscopy, Lithography, 3D modeling, Near field, Photoresist materials, Semiconducting wafers

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Proceedings Article | 23 September 2009 Paper

Model-based assist features

Bayram Yenikaya, Oleg Alexandrov, Yongjun Kwon, Anwei Liu, Ali Mokhberi, Apo Sezginer

Proceedings Volume 7488, 748815 (2009) https://doi.org/10.1117/12.829938

KEYWORDS: SRAF, Photomasks, Model-based design, Optimization (mathematics), Printing, Semiconducting wafers, Systems modeling, Resolution enhancement technologies, Optical proximity correction, Alternate lighting of surfaces

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Proceedings Article | 23 September 2009 Paper

Calibration of e-beam and etch models using SEM images

Constantin Chuyeshov, Jesus Carrero, Apo Sezginer, Vishnu Kamat

Proceedings Volume 7488, 74883I (2009) https://doi.org/10.1117/12.833485

KEYWORDS: Scanning electron microscopy, Calibration, Etching, Photomasks, Data modeling, Metrology, Image processing, Plasma etching, Process modeling, Systems modeling

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Proceedings Article | 11 May 2009 Paper

Model-based assist features

Bayram Yenikaya, Oleg Alexandrov, Steven Chen, Anwei Liu, Ali Mokhberi, Apo Sezginer

Proceedings Volume 7379, 73792Z (2009) https://doi.org/10.1117/12.824350

KEYWORDS: SRAF, Photomasks, Model-based design, Lithography, Printing, Optimization (mathematics), Electroluminescence, Critical dimension metrology, Lithographic illumination, Systems modeling

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Proceedings Article | 11 May 2009 Paper

Effect of scanner illumination and lens transmittance signatures on OPC accuracy

Hsu-Ting Huang, Apo Sezginer, Jacek Tyminski

Proceedings Volume 7379, 737910 (2009) https://doi.org/10.1117/12.824277

KEYWORDS: Optical proximity correction, Scanners, Calibration, Photomasks, Data modeling, Polarization, Lithography, Tolerancing, Systems modeling, Projection systems

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Proceedings Article | 16 March 2009 Paper

Enabling process window improvement at 45nm and 32nm with free-form DOE illumination

Tamer Coskun, Apo Sezginer, Vishnu Kamat, Michiel Kruger, Bayram Yenikaya, James Carriere, Jared Stack, Marc Himel

Proceedings Volume 7274, 72740B (2009) https://doi.org/10.1117/12.814215

KEYWORDS: Diffractive optical elements, Photomasks, Manufacturing, Nanoimprint lithography, Source mask optimization, SRAF, Lithographic illumination, Model-based design, Image processing, Lithium

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Proceedings Article | 13 March 2009 Paper

Algorithm for determining printability and colouring of a target layout for double patterning

Justin Ghan, Apo Sezginer

Proceedings Volume 7275, 72750O (2009) https://doi.org/10.1117/12.814321

KEYWORDS: Double patterning technology, Detection and tracking algorithms, Tolerancing, Spatial frequencies, Lithography, Photomasks, Fourier transforms, Model-based design, Projection lithography, Lithographic illumination

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Proceedings Article | 30 October 2007 Paper

Polygon-based compensation of proximity and density effects in photomask processes

Kiyoshi Kageyama, Katsuyuki Miyoko, Yoshimitsu Okuda, Gökhan Perçin, Apo Sezginer, Jesus Carrero, Alan Zhu, Anwei Liu

Proceedings Volume 6730, 67302Y (2007) https://doi.org/10.1117/12.746796

KEYWORDS: Photomasks, Databases, Calibration, Process modeling, Critical dimension metrology, Data modeling, Semiconducting wafers, Glasses, Etching, Model-based design

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Proceedings Article | 15 May 2007 Paper

Double patterning technology: process-window analysis in a many-dimensional space

Apo Sezginer, Bayram Yenikaya, Wolfgang Staud

Proceedings Volume 6607, 66072S (2007) https://doi.org/10.1117/12.729011

KEYWORDS: Etching, Double patterning technology, Lithography, Optical lithography, Error analysis, Image processing, Statistical analysis, Visualization, Image registration, Modulation transfer functions

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Proceedings Article | 21 March 2007 Paper

A rigorous method to determine printability of a target layout

Bayram Yenikaya, Apo Sezginer

Proceedings Volume 6521, 652112 (2007) https://doi.org/10.1117/12.711530

KEYWORDS: Modulation transfer functions, Lithography, Tolerancing, Photomasks, Optical proximity correction, Spatial frequencies, Modulation, Resolution enhancement technologies, Photoresist materials, Semiconducting wafers

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Proceedings Article | 21 March 2007 Paper

Double patterning technology: process-window analysis in a many-dimensional space

Apo Sezginer, Bayram Yenikaya

Proceedings Volume 6521, 652113 (2007) https://doi.org/10.1117/12.711515

KEYWORDS: Etching, Lithography, Double patterning technology, Error analysis, Optical lithography, Image processing, Statistical analysis, Visualization, Image registration, Modulation transfer functions

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Proceedings Article | 20 March 2007 Paper

Model-based assist feature generation

Bayram Yenikaya, Apo Sezginer

Proceedings Volume 6521, 652102 (2007) https://doi.org/10.1117/12.711504

KEYWORDS: Photomasks, SRAF, Optical proximity correction, Tolerancing, Lithography, Model-based design, Photoresist materials, Algorithm development, Image processing, Lithographic illumination

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Proceedings Article | 20 October 2006 Paper

PPC model build methodology: sequential litho and etch verification

Ali Mokhberi, Vishnu Kamat, Apo Sezginer, Franz Zach, Gökhan Perçin, Jesus Carrero, Hsu-Ting Huang

Proceedings Volume 6349, 63491Z (2006) https://doi.org/10.1117/12.692931

KEYWORDS: Etching, Calibration, Data modeling, Semiconducting wafers, Particles, Scanning electron microscopy, Chromatic aberrations, Performance modeling, Wafer-level optics, Photomasks

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SPIE Journal Paper | 1 April 2006

Metrology for stepper illumination pupil profile

Gokhan Perçin, Apo Sezginer, Franz Zach

JM3, Vol. 5, Issue 02, 023006, (April 2006) https://doi.org/10.1117/12.10.1117/1.2202641

KEYWORDS: Scanning electron microscopy, Lithographic illumination, Semiconducting wafers, Photomasks, Edge detection, Image processing, Metrology, Diffusion, Denoising, Binary data

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Proceedings Article | 20 March 2006 Paper

Building a computational model for process and proximity compensation

Gökhan Perçin, Hsu-Ting Huang, Franz Zach, Apo Sezginer, Ali Mokhberi

Proceedings Volume 6154, 61543N (2006) https://doi.org/10.1117/12.656501

KEYWORDS: Etching, Photoresist materials, Semiconducting wafers, Photomasks, Data modeling, Process modeling, Calibration, Lithography, Cadmium sulfide, Metrology

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Proceedings Article | 20 March 2006 Paper

Inverting pupil illumination from resist-based measurements

Gokhan Perçin, Apo Sezginer, Franz Zach

Proceedings Volume 6154, 61543W (2006) https://doi.org/10.1117/12.656495

KEYWORDS: Scanning electron microscopy, Lithographic illumination, Semiconducting wafers, Photomasks, Edge detection, Image processing, Critical dimension metrology, Fiber optic illuminators, Superposition, Lithography

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Computational models used in process proximity correction require accurate description of the pupil illumination function of the lithography projector. Traditional top-hat approximation for pupil illumination function is no longer sufficient to meet stringent CD control requirements of low-k1 applications. The pupil illumination profile can change across the exposure field, contributing to across-field linewidth variation. We present a measurement of the pupil illumination based on exposing pinhole patterns on a wafer at different dose and defocus settings, and processing SEM images of patterns printed in photoresist. The fundamental principle of the method is Abbe's formulation of image formation: the intensity-image formed in resist is an incoherent, linear superposition of images each one of which is formed by illuminating the photomask by a single plane-wave. A single plane-wave that is incident on the photomask maps to a single point in the Fourier-transform aperture of the illuminator. The pupil-fill of the illuminator is obtained from SEM images by a model-based method consisting of these steps: First, resist edges in the SEM images are detected by an edge detection algorithm based on Perona-Malik diffusion. Coordinates of the points on the resist edge are obtained with respect to a reference ruler. The image intensity at any resist edge is equal to the dose-to-clear. This provides an equation for the image intensity at each point on the edge of a pinhole image. Multiple values of dose and defocus, and multiple points on each resist edge provide a large system of equations. The result of the inversion for a 193nm 0.75 NA stepper with σ = 0.55/0.85 annular illumination at five exposure field locations is presented. The CD difference between the nominal top-hat illumination and the inverted illumination was up to 1.8 nm for 1:1 line and space features ranging from 100nm to 300nm. Variation of the illumination along the long-dimension of the slit of the scanner caused 0.6 nm of CD variation for the same 1:1 dense lines.

Proceedings Article | 14 March 2006 Paper

Across field CD control improvement for critical level imaging: new applications for layout correction and optimization

Franz Zach, Gökhan Percin, Apo Sezginer

Proceedings Volume 6156, 61560I (2006) https://doi.org/10.1117/12.657268

KEYWORDS: Photomasks, Critical dimension metrology, Resolution enhancement technologies, Lithography, Image processing, Manufacturing, Diffusion, Semiconducting wafers, Optical proximity correction, Process engineering

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Proceedings Article | 14 March 2006 Paper

Optimal segmentation of polygon edges

Apo Sezginer, Bayram Yenikaya, Hsu-Ting Huang, Vishnu Kamat, Yung-Tin Chen

Proceedings Volume 6156, 61561G (2006) https://doi.org/10.1117/12.656695

KEYWORDS: Image segmentation, Photomasks, Image processing algorithms and systems, Optical proximity correction, Optimization (mathematics), Tolerancing, Data modeling, Detection and tracking algorithms, Manufacturing, Semiconducting wafers

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Proceedings Article | 14 March 2006 Paper

RET for the wiring layer of a 3D memory

Yung-Tin Chen, Paul Poon, Chris Petti, Vishnu Kamat, Apo Sezginer, Hsu-Ting Huang

Proceedings Volume 6156, 61561E (2006) https://doi.org/10.1117/12.656725

KEYWORDS: Photomasks, Resolution enhancement technologies, Bridges, Scanning electron microscopy, Optical proximity correction, Image segmentation, Array processing, Manufacturing, Solids, Critical dimension metrology

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Proceedings Article | 13 March 2006 Paper

Sequential PPC and process-window-aware mask layout synthesis

Apo Sezginer, Franz Zach, Bayram Yenikaya, Jesus Carrero, Hsu-Ting Huang

Proceedings Volume 6156, 615613 (2006) https://doi.org/10.1117/12.656667

KEYWORDS: Etching, Photomasks, Process modeling, Model-based design, Lithography, Data modeling, Photoresist processing, Tolerancing, Image processing, Semiconducting wafers

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Proceedings Article | 15 July 2003 Paper

LithoCell-integrated critical dimension metrology

J. Stirton, Clinton Miller, Anita Viswanathan, Makoto Miyagi, Lawrence Lane, Michael Laughery, Tarun Parikh, Kin Chung Chan, Apo Sezginer

Proceedings Volume 5041, (2003) https://doi.org/10.1117/12.485241

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Metrology, Particles, Time metrology, Control systems, Metals, Scanning electron microscopy, Tin, Process control

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Proceedings Article | 2 June 2003 Paper

Scatterometry-based overlay metrology

Hsu-Ting Huang, Gayathri Raghavendra, Apo Sezginer, Kenneth Johnson, Fred Stanke, Michelle Zimmerman, Cristina Cheung, Makoto Miyagi, Bhanwar Singh

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483668

KEYWORDS: Overlay metrology, Scatterometry, Reticles, Semiconducting wafers, Photomasks, Optical properties, Diffraction gratings, Metals, Scatter measurement, Diffraction

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Proceedings Article | 16 July 2002 Paper

Complementary use of scatterometry and SEM for photoresist profile and CD determination

Yuya Toyoshima, Isao Kawata, Yasutsugu Usami, Yasuhiro Mitsui, Apo Sezginer, Eric Maiken, Kin-Chung Chan, Kenneth Johnson, Dean Yonenaga

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473458

KEYWORDS: Scatterometry, Scanning electron microscopy, Semiconducting wafers, Photoresist materials, Scatter measurement, Critical dimension metrology, Process control, Databases, Metrology, Cadmium

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Showing 5 of 23 publications

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