Dr. Arnaud Dauendorffer Profile

Dr. Arnaud Dauendorffer

at Tokyo Electron Kyushu Ltd

SPIE Involvement:

Author

Publications (19)

Proceedings Article | 10 April 2024 Poster

Poster

Latest advances in EUV patterning for preparation of high numerical aperture EUV

Soichiro Okada, Arnaud Dauendorffer, Yuhei Kuwahara, Cong Que Dinh, Ken Ando, Atsushi Tsuboi, Kathleen Nafus, Nobuyuki Fukui, Philippe Foubert, Danilo De Simone

Proceedings Volume 12957, 129571W (2024) https://doi.org/10.1117/12.3010713

KEYWORDS: Extreme ultraviolet, Optical lithography, Etching, Plasma etching, Photoresist materials, Critical dimension metrology, Plasma, Metal oxides, Lithography, High volume manufacturing

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Proceedings Article | 9 April 2024 Poster + Paper

Poster + Paper

Roughness improvement by post-development treatment of CAR for high-NA EUV lithography

Kayoko Cho, Hikari Tomori, Cong Que Dinh, Seiji Nagahara, Arisa Hara, Seiji Fujimoto, Arnaud Dauendorffer, Lior Huli, Kanzo Kato, Nathan Antonovich, Makoto Muramatsu

Proceedings Volume 12957, 129571Q (2024) https://doi.org/10.1117/12.3010231

KEYWORDS: Chemically amplified resists, Extreme ultraviolet, Quenching, Extreme ultraviolet lithography, Line width roughness, Etching, Line edge roughness, Stochastic processes, High volume manufacturing, Semiconductors

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Proceedings Article | 22 November 2023 Poster

Poster

Holistic litho-etch approach towards high NA EUV challenges

Soichiro Okada, Arnaud Dauendorffer, Yuhei Kuwahara, Satoru Shimura, Philippe Foubert, Danilo De Simone, Cong Que Dinh, Ken Ando, Atsushi Tsuboi, Nobuyuki Fukui, Arame Thiam, Yannick Feurprier, Kathleen Nafus

Proceedings Volume PC12750, PC1275011 (2023) https://doi.org/10.1117/12.2687568

KEYWORDS: Extreme ultraviolet, Etching, Plasma etching, Photoresist materials, Optical lithography, Critical dimension metrology, Plasma, Metal oxides, Lithography, High volume manufacturing

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Proceedings Article | 21 November 2023 Presentation + Paper

Presentation + Paper

Litho process development for pillars to enable high density 4f2 memory cells at 34nm pitch

M. Pak, A. Dauendorffer, K. Nafus, A. Das, M. Hasan, P. Delgadillo

Proceedings Volume 12750, 1275004 (2023) https://doi.org/10.1117/12.2686265

KEYWORDS: Silicon carbide, Standards development, Optical lithography, Extreme ultraviolet lithography, Array processing, Printing, Photoresist processing, Design and modelling

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Proceedings Article | 1 May 2023 Paper

Paper

Advanced development methods for high-NA EUV lithography

Cong Que Dinh, Seiji Nagahara, Yuhei Kuwahara, Arnaud Dauendorffer, Soichiro Okada, Seiji Fujimoto, Shinichiro Kawakami, Satoru Shimura, Makoto Muramatsu, Kayoko Cho, Xiang Liu, Kathleen Nafus, Michael Carcasi, Ankur Agarwal, Mark Somervell, Lior Huli, Kanzo Kato, Michael Kocsis, Peter De Schepper, Stephen Meyers, Lauren McQuade, Kazuki Kasahara, Jara Garcia Santaclara, Rik Hoefnagels, Chris Anderson, Patrick Naulleau

Proceedings Volume 12498, 1249806 (2023) https://doi.org/10.1117/12.2655928

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Line edge roughness, Lithography, Etching

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One of the key steps in the pattern formation chain of (extreme ultraviolet) EUV lithography is the development process to resolve the resist pattern after EUV exposure. A simple traditional development process might not be sufficient to achieve the requirements of an ultra-high-resolution feature with low defect levels in high numerical aperture (NA) EUV lithography. In our previous literature, a new development method named ESPERT^TM (Enhanced Sensitivity develoPER Technology^TM) has been introduced to improve the performance of metal oxide resists (MOR) for 0.33 NA EUV lithography by breaking the dose-roughness trade-off. In this work, this development technique was optimised for high-NA lithography to not only keep the advantages of previous ESPERT^TM version, but also reduce the defect levels at a higher EUV sensitivity. This is made possible thanks to the capability of the new version of ESPERT^TM that can easily remove the residue (undeveloped resist) at low exposure dose area to enhance the developing contrast. Using 0.33 NA EUV scanners at imec on 16-nm half-pitch (HP) line/space (L/S) patterns, with the new development method, EUV dose-to-size (DtS) was reduced roughly 16%, and total after-development-inspection (ADI) defects was reduced by a factor of approximately 7, simultaneously. In another condition, DtS was reduced from 44.2 to 28.4 mJ/cm² (an improvement of 36%), while the number of after-etch-inspection (AEI) single-bridge defects was reduced by half, simultaneously. Using the 0.5 NA exposure tool at Lawrence Berkeley National Laboratory with this new development method, the exposure sensitivity and line-width-roughness (LWR) were both improved by 30% and 21%, respectively. An 8-nm-HP L/S pattern was also successfully printed by this high NA tool. Using a 150 kV electron-beam (EB) lithography system, a 12-nm-HP of pillars was successfully printed on a 22-nm-thick MOR resist with ESPERT^TM. With all the advantages of having a high exposure sensitivity, a low defectivity, and an ultra-high-resolution capability, this new development method is expected to be a solution for high-NA EUV lithography.

Proceedings Article | 1 May 2023 Poster + Paper

Poster + Paper

Recent advances in EUV patterning in preparation towards high-NA EUV

Seiji Nagahara, Arnaud Dauendorffer, Arame Thiam, Xiang Liu, Yuhei Kuwahara, Cong Que Dinh, Soichiro Okada, Shinichiro Kawakami, Hisashi Genjima, Noriaki Nagamine, Makoto Muramatsu, Satoru Shimura, Atsushi Tsuboi, Kathleen Nafus, Yannick Feurprier, Marc Demand, Rajesh Ramaneti, Philippe Foubert, Danilo De Simone, Geert Vendenberghe

Proceedings Volume 12498, 124981G (2023) https://doi.org/10.1117/12.2657432

KEYWORDS: Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Interfaces, Etching, Coating thickness, Lithography, Stochastic processes, Critical dimension metrology

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Proceedings Article | 30 April 2023 Presentation

Presentation

Etch optimization for defect reduction of EUV photoresists

Alexandra Krawicz, Katie Lutker-Lee, Sophie Thibaut, Eric Liu, Danilo De Simone, Arnaud Dauendorffer, Yannick Feurprier, Kathleen Nafus, Philippe Bézard, Philippe Foubert, Noriaki Oikawa

Proceedings Volume PC12499, PC1249903 (2023) https://doi.org/10.1117/12.2658971

KEYWORDS: Photoresist materials, Etching, Extreme ultraviolet lithography, Printing, Bridges, Thin film coatings, Stochastic processes, Scanners, Oxides, Metals

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Proceedings Article | 11 November 2022 Presentation

Presentation

Holistic litho-etch development to address patterning challenges towards high NA EUV

Seiji Nagahara, Arnaud Dauendorffer, Xiang Liu, Tomoya Onitsuka, Hisashi Genjima, Noriaki Nagamine, Yuhei Kuwahara, Yuya Kamei, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Sophie Thibaut, Alexandra Krawicz, Steven Grzeskowiak, Katie Lutker-Lee, Eric Liu, Christopher Catano, Joshua LaRose, Jeffrey Shearer, Lior Huli, Philippe Foubert, Danilo De Simone

Proceedings Volume PC12292, PC122920N (2022) https://doi.org/10.1117/12.2642941

KEYWORDS: Extreme ultraviolet, Optical lithography, Extreme ultraviolet lithography, Etching, Plasma etching, Lithography, Yield improvement, Stochastic processes, Plasma, Photoresist materials

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Proceedings Article | 21 June 2022 Paper

Paper

A lithographic and etching study on EUV contact hole patterning for stochastic process mitigation towards advanced device scaling

D. De Simone, P. Foubert, R. Fallica, A. Dauendorffer, K. Nafus, N. Oikawa, H. Oka, K. Kato

Proceedings Volume PC12051, PC120510P (2022) https://doi.org/10.1117/12.2614165

KEYWORDS: Etching, Photoresist processing, Optical lithography, Stochastic processes, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Critical dimension metrology, System on a chip, Metrology

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SPIE Journal Paper | 30 May 2022

Elucidating the role of imaging metrics for variability and after etch defectivity

Joern-Holger Franke, Andreas Frommhold, Arnaud Dauendorffer, Kathleen Nafus, Gijsbert Rispens, Mark Maslow

JM3, Vol. 21, Issue 02, 023201, (May 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.023201

KEYWORDS: Nanoimprint lithography, Etching, Diffraction, Spatial frequencies, Stochastic processes, Image processing, Critical dimension metrology, Photomasks, Semiconducting wafers, Metrology

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Proceedings Article | 25 May 2022 Poster + Presentation + Paper

Poster + Presentation + Paper

Approaches to enable patterning of tight pitches towards high NA EUV

Hiroki Tadatomo, Arnaud Dauendorffer, Tomoya Onitsuka, Hisashi Genjima, Yasuyuki Ido, Soichiro Okada, Yuhei Kuwahara, Arisa Hara, Congque Dinh, Seiji Fujimoto, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Kenta Ono, Yannick Feurprier, Marc Demand, Ainhoa Romo Negreira, Seiji Nagahara, Blanco Victor, Philippe Foubert, Danilo De Simone

Proceedings Volume 12056, 120560F (2022) https://doi.org/10.1117/12.2614012

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet, Bridges, Extreme ultraviolet lithography, Inspection, Image processing

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Extreme ultraviolet (EUV) lithography has been used for mass production for several years. Now the resolution limit of current 0.33 NA single exposure has been approaching. To enhance the resolution limit, high NA exposure tool has been developing. At the limit, not only the stochastic failures1, but also patterning trade-off has been becoming challenging. In this paper, to overcome the patterning trade-off of LS and CH, several approaches were demonstrated for both CAR and MOR. As for chemically amplified resist (CAR), to overcome the patterning trade-off of line and space, two different approaches were demonstrated. One was a developer rinse process optimization, and the other was a top deposition treatment during etching process. By using the two approaches, pitch 24 nm LS patterns were successfully transferred. As to CAR CH patterning, a new shrink technique during etch process was successfully tested for sub 15 nm hole patterning. No missing hole detected at 12 nm hole size by voltage contrast metrology. For tighter nodes, spin-on metal oxide resist (MOR) have been considering to be used because it offers a series of advantages. It has high sensitivity and resolution because of its high photon absorption and simple reaction mechanism. It also inherently has a higher etch resistance which enables resist thickness thinner and collapse margin higher. Spin-on process of MOR is expect to contribute high productivity which is essential for high volume manufacturing (HVM). Because defect reduction is one of the key points to enable MOR process for HVM, continuous investigation of defect mitigation has been done. For pitch 32 nm LS, the mitigation was confirmed by fine optimization with the combination of the etch process and the implementation of new under layers. As to pitch 28nm line and space, optimized illumination gave better defect process windows. Moreover, a new wet developer process was successfully proposed to prevent pitch 36 nm hexagonal pillars collapse during wet development with 25% higher EUV sensitivity.

Proceedings Article | 25 May 2022 Presentation + Paper

Presentation + Paper

Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

Angélique Raley, Lior Huli, Steven Grzeskowiak, Katie Lutker-Lee, Alexandra Krawicz, Yannick Feurprier, Eric Liu, Kanzo Kato, Kathleen Nafus, Arnaud Dauendorffer, Nayoung Bae, Josh LaRose, Andrew Metz, Dave Hetzer, Masanobu Honda, Tetsuya Nishizuka, Akiteru Ko, Soichiro Okada, Yasuyuki Ido, Tomoya Onitsuka, Shinichiro Kawakami, Seiji Fujimoto, Satoru Shimura, Cong Que Dinh, Makoto Muramatsu, Peter Biolsi, Hiromasa Mochiki, Seiji Nagahara

Proceedings Volume 12056, 120560A (2022) https://doi.org/10.1117/12.2613063

KEYWORDS: Plasma etching, Etching, Extreme ultraviolet, Optical lithography, Plasma, Focus stacking software, Semiconducting wafers, Photoresist processing, Extreme ultraviolet lithography, Silicon carbide

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Proceedings Article | 28 September 2021 Presentation

Presentation

Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure

Arnaud Dauendorffer, Tomoya Onitsuka, Hiroki Tadatomo, Keisuke Yoshida, Takahiro Shiozawa, Hisashi Genjima, Noriaki Nagamine, Yuya Kamei, Soichiro Okada, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Ainhoa Romo Negreira, Seiji Nagahara, Congque Dinh, Luka Kljucar, Danilo De Simone, Philippe Foubert

Proceedings Volume 11854, 118540B (2021) https://doi.org/10.1117/12.2600860

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Metals, Etching, Stochastic processes, Semiconductors, Semiconductor manufacturing, Resistance, Photomasks, Particles

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Proceedings Article | 17 March 2021 Poster + Presentation + Paper

Poster + Presentation + Paper

Novel processing technologies for advanced EUV patterning materials using metal oxide resist (MOR)

Tomoya Onitsuka, Shinichiro Kawakami, Arnaud Dauendorffer, Satoru Shimura, Kathleen Nafus, Yannick Feurprier, Philippe Foubert, Danilo De Simone

Proceedings Volume 11609, 116091L (2021) https://doi.org/10.1117/12.2583809

KEYWORDS: Extreme ultraviolet, Optical lithography, Printing, Metals, Oxides, High volume manufacturing, Extreme ultraviolet lithography, Contamination, Coating

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Proceedings Article | 22 February 2021 Poster + Presentation + Paper

Poster + Presentation + Paper

EUV defect reduction activities using coater/developer and etching technique

Takahiro Shiozawa, Keisuke Yoshida, Noriaki Nagamine, Arnaud Dauendorffer, Satoru Shimura, Kathleen Nafus, Yannick Feurprier, Kenta Ono, Shota Yoshimura, Atsutoshi Inokuchi, Kiyoshi Maeda, Tetsuya Nishizuka, Shinya Morikita, Yoshihide Kihara, Ken Kobayashi

Proceedings Volume 11612, 116120T (2021) https://doi.org/10.1117/12.2583772

KEYWORDS: Extreme ultraviolet, Etching, Extreme ultraviolet lithography, Stochastic processes, Photoresist processing, Particles, Lithographic illumination, High volume manufacturing

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Proceedings Article | 20 September 2020 Presentation

Presentation

Improvement of EUV processes for high volume manufacturing

Makoto Muramatsu, Hiroki Tadatomo, Tomoya Onitsuka, Keisuke Yoshida, Arnaud Dauendorffer, Takahiro Shiozawa, Soichiro Okada, Shinichiro Kawakami, Satoru Shimura

Proceedings Volume 11517, 115170M (2020) https://doi.org/10.1117/12.2572637

KEYWORDS: Extreme ultraviolet, High volume manufacturing, Etching, Extreme ultraviolet lithography, Lithography, Semiconductors, Photomasks, Stochastic processes, Liquids, Photoresist processing

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Proceedings Article | 23 March 2020 Paper

Paper

CLEAN TRACK solutions for defectivity and CD control towards 5 nm and smaller nodes

Arnaud Dauendorffer, Takahiro Shiozawa, Keisuke Yoshida, Noriaki Nagamine, Yuya Kamei, Shinichiro Kawakami, Satoru Shimura, Kathleen Nafus, Akihiro Sonoda, Philippe Foubert

Proceedings Volume 11323, 113232A (2020) https://doi.org/10.1117/12.2551627

KEYWORDS: Photoresist materials, Critical dimension metrology, Etching, Extreme ultraviolet lithography, Bridges, Extreme ultraviolet, Stochastic processes, Semiconducting wafers, Photoresist processing

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Proceedings Article | 7 October 2019 Paper

Paper

New coater/developer technologies for CD control and defectivity reduction towards 5 nm and smaller nodes

Arnaud Dauendorffer, Yuya Kamei, Shinichiro Kawakami, Makoto Muramatsu, Kathleen Nafus, Akihiro Sonoda, Philippe Foubert

Proceedings Volume 11147, 111471N (2019) https://doi.org/10.1117/12.2536470

KEYWORDS: Critical dimension metrology, Bridges, Extreme ultraviolet lithography, Semiconducting wafers, Stochastic processes, Inspection, Extreme ultraviolet, Scanners, Lithography, Silicon

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Proceedings Article | 2 April 2014 Paper

Paper

Investigation of a methodology for in-film defects detection on film coated blank wafers

Akiko Kiyotomi, Arnaud Dauendorffer, Satoru Shimura, Shinobu Miyazaki, Takemasa Miyagi, Shigeru Ota, Koji Haneda, Oksen Baris, Junwei Wei

Proceedings Volume 9050, 905024 (2014) https://doi.org/10.1117/12.2045737

KEYWORDS: Inspection, Scanning electron microscopy, Defect detection, Etching, Signal detection, Semiconducting wafers, Lithography, Optical inspection, Thin film coatings, Manufacturing

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Showing 5 of 19 publications

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