Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.
We present laser results of OPS structures based on highly strained InGaAs quantum wells emitting at 1178nm and
frequency doubled to produce high power, high beam quality laser radiation at 589nm. The laser architecture is the same
as in our commercial offerings, allowing us to achieve the desired results with a system significantly simpler than
Optically-pumped semiconductor (OPS) lasers are power-scalable, wavelength-flexible, infrared brightness converters.
Adding intra-cavity frequency doubling turns them into efficient, low noise, high power visible laser sources. We report
on a laser combining an InGaAs gain medium with an LBO nonlinear crystal to produce more than 20 Watt CW in
single transverse mode at 532 nm. Efficient cooling of the single gain chip using advanced mounting techniques is the
key to making the laser reliable at high CW powers. A rugged and compact package withstands significant
environmental excursions. The laser's low noise makes it suitable for demanding Ti:Sapphire pumping applications.