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Dr. Arndt Jaeger
at ams-OSRAM International GmbH
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Author
Publications (4)
Proceedings Article | 22 February 2006 Paper
Kelvin force microscopy on a (Al1-xGax)0.5In0.5P light-emitting diode
Proceedings Volume 6134, 61340I (2006) https://doi.org/10.1117/12.645768
KEYWORDS: Diodes, Light emitting diodes, Modulation, Microscopy, Aluminium gallium indium phosphide, Spatial resolution, Interfaces, Heterojunctions, Semiconductors, Gallium
Proceedings Article | 7 March 2005 Paper
Efficiency and reliability of AlInGaP LEDs grown on germanium substrates
Paola Altieri, Arndt Jaeger, Peter Stauss, Torsten Pietzonka, Klaus Streubel
Proceedings Volume 5739, (2005) https://doi.org/10.1117/12.591508
KEYWORDS: Germanium, Light emitting diodes, Gallium arsenide, Aluminium gallium indium phosphide, Chemical species, Annealing, Coating, Reliability, Doping, Quantum wells
Proceedings Article | 20 December 2004 Paper
High-brightness red-emitting AlGaInP thin-film RCLEDs
Reto Joray, Marc Ilegems, Ross Stanley, Wolfgang Schmid, Rainer Butendeich, Ralph Wirth, Arndt Jaeger, Klaus Streubel
Proceedings Volume 5594, (2004) https://doi.org/10.1117/12.579495
KEYWORDS: Thin films, External quantum efficiency, Light emitting diodes, Aluminium gallium indium phosphide, Reflectors, Semiconductors, Waveguides, Quantum wells, Absorption, Interfaces
Proceedings Article | 18 June 2004 Paper
Color-dependent degradation of high-brightness AlGaInP LEDs
Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.529209
KEYWORDS: Light emitting diodes, Aluminium gallium indium phosphide, External quantum efficiency, Internal quantum efficiency, Aluminum, Quantum wells, Quantum efficiency, Electrons, Reliability, Gallium arsenide
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