We report on the investigation of the long term stability study of InAs1-xSbx (x=0.09) high operation temperature (HOT) photodiode grown on GaAs substrate. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The dark current densities of sulphur anodic film, SU-8 photoresist and unpassivated devices was compared. Obtained results indicates that the surface leakage current was not fully supressed by unipolar electron barrier. The most stable behaviour after an exposure of 6 months to atmosphere and annealing at 373 K for 72 h was observed for sulphur anodic passivation. This technique turned to be effective also in reduction of oxygen (O) 2s peak in X-ray photoelectron spectroscopy (XPS) in comparison with only etched sample.
The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be – 1.17 × 10-3 , and 1.12 × 10-3 , respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×1018 cm-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.
We investigate the high-operating temperature performance of InAsSb/AlSb heterostructure detectors with cutoff wavelengths near 5 μm at 230 K. The devices have been fabricated with different types of absorbing layers: nominally undoped absorber (with n-type conductivity), and both n- and p-type doped. The results show that the device performance strongly depends on absorber layer type. Generally, the p-type absorber provides higher values of current responsivity than the n-type absorber, but at the same time also higher values of dark current. The device with the nominally undoped absorbing layer shows moderate values of both current responsivity and dark current. Resulting detectivities D * of nonimmersed devices vary from 2 × 109 to 5 × 109 cm Hz1/2 W ? 1 at 230 K, which is easily achievable with a two-stage thermoelectric cooler. Optical immersion increases the detectivity up to 5 × 1010 cm Hz1/2 W ? 1.
This article reports the parameters and characteristics of recently introduced mid Infrared (3-12um) detection modules for gas sensing applications. In Mid infrared range one can detect almost every simple or complex compound existing on earth. Currently a driving factors for development of gas sensors are related to air/water quality, explosive material detection and medical applications, especially breath analyzers. Gas sensors require source (thermal, diode or laser), sampling compartment and detection module. At VIGO System we are concentrated on designing and manufacturing high operating temperature detectors, fast, sensitive, affordable and reliable required for development of such platforms. We are using active, absorber elements based on complex HgCdTe or InAsSb heterostructures monolithically integrated with optical immersion lens. Additional collective optics, signal amplification, temperature control and heat dissipation will be also discussed in this article. Those functions are critical for ultimate performance of gas sensors.
In this work we investigate the high-operating temperature performance of InAsSb/AlSb heterostructure detectors with cut-off wavelengths near 5 μm at 230 K. The devices have been fabricated with different type of the absorbing layer: nominally undoped absorber, and both n- and p-type doped. The results show that the device performance strongly depends on absorber layer doping. Generally, p-type absorber provides higher values of current responsivity than n-type absorber, but at the same time also higher values of dark current. The device with nominally undoped absorbing layer shows moderate values of both current responsivity and dark current. Resulting detectivities D° of non-immersed devices varies from 2×109 to 7×109 cmHz1/2/W at 230 K, which is easily achievable with a two stage thermoelectric cooler.
The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 – 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.
Theoretical and experimental investigations on the response time improvement of unbiased long-wave infrared (LWIR) HgCdTe detectors operating at temperatures T=230 K were presented. Metal–organic chemical vapor deposition technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition and donor/acceptor doping and without postgrown ex-situ annealing. The time constant is lower in biased detectors due to Auger-suppression phenomena and reduction of diffusion capacitance related to a wider depletion region. The relatively high bias current requirements and excessive low-frequency noise, which reduces the detectivity of biased detectors, inspire research on the time constant improvement of unbiased detectors. The response time of high-operating temperature LWIR HgCdTe detectors revealed complex behavior being dependent on the applied reverse bias, the operating temperature, the absorber thickness and doping, the series resistance, and the electrical area of the devices. The response time of 2 ns was achieved for unbiased 30×30 μm HgCdTe structures with λ50%=10.6 μm operating at T=230 K.
Theoretical and experimental investigations on the response time improvement of biased and unbiased long-wave infrared (LWIR) HgCdTe detectors operating at temperatures T = 230K were presented in this paper. MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown ex-situ annealing. Donor doping efficiency in (111) and (100) oriented HgCdTe layers has been discussed. The time constant is lower in biased detectors due to Auger suppression phenomena and reduction of diffusion capacitance related to wider depletion region. The relatively high bias currents requirements and excessive low frequency noise which reduces the detectivity of biased detectors inspire researches on the time constant improvement of unbiased detectors. The response time of high-operating temperature (HOT) LWIR HgCdTe detectors revealed complex behavior being dependent on the applied the reverse bias, the operating temperature, the absorber thickness and doping, the series resistance and the electrical area of the devices.
We present progress in metal organic chemical vapor deposition (MOCVD) growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool for the fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping, and without post grown ex-situ annealing. Surface morphology, residual background concentration, and acceptor doping efficiency are compared in (111) and (100) oriented HgCdTe epilayers. At elevated temperatures, the carrier lifetime in measured p-type photoresistors is determined by Auger 7 process with about one order of magnitude difference between theoretical and experimental values. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for medium wavelength infrared photoconductors operated in high-operating temperature conditions.
In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of
Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an
excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor
doping and without post grown annealing.
Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared
photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity
equal to 6.5x109 Jones and therefore outperform its (111) counterpart.
The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors.
The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe
detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by “Rule
07”.
In the last decade, new architecture designs such as nBn devices or unipolar barrier photodiodes have been proposed to achieve high-operating temperature (HOT) detectors. This idea has been also implemented in HgCdTe ternary material systems. However, the implementation of this detector structure in an HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber-barrier interface. We report on midwavelength infrared HgCdTe barrier detectors with a zero valence band offset, grown by metal organic chemical vapor deposition on GaAs substrates. The experiments indicate the influence of the barrier on the electrical and optical performances of the p+BpnN+ device. The devices exhibit very low-dark current densities in the range of (2−3)×10−3 A/cm2 at 230 K and a high-current responsivity of about 2 A/W in the wide range of reverse bias voltage. The estimated thermal activation energy of about 0.33 eV is close to the full Hg0.64Cd0.36Te bandgap, which indicates diffusion limited dark currents.
The work reports on mid-wavelength infrared HgCdTe barrier detectors with a zero valence band offset, grown by metal organic chemical vapour deposition on GaAs substrates. The experiments indicate the influence of the barrier on electrical and optical performances of the p+BnN+ device. The devices exhibit very low dark current densities in the range of (2÷3)×10–3 A/cm2 at 300 K and a high current responsivity of about 2A/W in the wide range of reverse bias voltage. The estimated thermal activation energy of about 0.33 eV is close to the full Hg0.64Cd0.36Te bandgap, what indicates diffusion limited dark currents.
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