We present here a photonic chip based axicon like lens that has a 850 um long central lobe, with a diameter of 5.7 um. The 1.52 mm x 1.38 mm device consists of circular grating with a novel azimuthal apodization to increase light penetration depth by an order of magnitude and multiple stages of 1x2 multimode interferometer splitters/combiners. We characterize the axicon with a swept source laser (1300 +/- 50 nm) coupled in with a GRIN lens onto the device, with the light out-coupled from a regular grating coupler. We also characterize the spectral performance of the device, using balanced homodyne detection to resolve the power, and show that the position of the central lobe does not vary significantly with wavelength.
Silicon photonics is rapidly emerging as a mature technology platform for the fabrication of photonic integrated circuits. It builds on the technology base of the CMOS-world and allows to implement advanced photonic functions on a small footprint chip with high accuracy and yield. For operation at telecom wavelengths above 1 micrometer one typically uses silicon-on-insulator wafers with waveguides with a silicon core. For short-wavelength operation, below 1 micrometer, one can use a silicon nitride (SiN) core instead of a silicon core. This results in a platform for operation in the visible and near infrared, with moderately high refractive index contrast and low loss photonic components. Operation at short wavelengths can be beneficial for a variety of reasons, including the possibility to use low cost high performance sources and detectors and the compatibility with sensing in an aqeous environment.
The SiN CMOS-platform has been used to demonstrate a variety of spectroscopic sensing functions. In essence the SiN chips may contain sensing structures, whereby the evanescent tail of the guided light is interacting with the analyte, as well as spectrometric functions to read out the spectrum resulting from the interaction with the analyte. This approach has allowed to demonstrate refractive index biosensors, spontaneous Raman spectroscopy and surface-enhanced Raman spectroscopy. In the latter case the SiN waveguides are enriched with gold nano-antennas to enhance the local field strength seen by the analyte. The spectrometric functions can be based on arrayed waveguide gratings, echelle grating spectrometers or Fourier Transform spectrometers.
The evanescent tail of the guided modes can efficiently excite Raman active molecules located in the cladding of a waveguide. Similarly, a significant fraction of the total emitted Stokes power is evanescently coupled to the same mode. Further, the enhancement effects inherent to the waveguide, alongside with the long interaction length, lead to an increased light-matter interaction, resulting in a higher sensitivity as required by spectroscopic applications, especially in the context of Raman spectroscopy. We calculate the spontaneous Raman scattering efficiency as a function of silicon-nitride strip waveguide dimensions and show that under typical conditions, the overall efficiency is approximately two orders of magnitude higher than in confocal configuration in the free space. We also report the experimental demonstration of the use of silicon-nitride based photonic waveguides in a lab-on-a-chip context for Raman spectroscopy. To the best of our knowledge, this is the first demonstration of Raman spectroscopy using photonic waveguides.
Low temperature PECVD silicon nitride photonic waveguides have been fabricated by both electron beam lithography and 200 mm DUV lithography. Propagation losses and bend losses were both measured at 532 and 900 nm wavelength, revealing sub 1dB/cm propagation losses for cladded waveguides at both wavelengths for single mode operation. Without cladding, propagation losses were measured to be in the 1-3 dB range for 532 nm and remain below 1 dB/cm for 900 nm for single mode waveguides. Bend losses were measured for 532 nm and were well below 0.1 dB per 90 degree bend for radii larger than 10 μm.
In recent years silicon photonics has become a mature technology enabling the integration of a variety of optical and optoelectronic functions by means of advanced CMOS technology. While most efforts in this field have gone to telecom and datacom/interconnect applications, there is a rapidly growing interest in using the same technology for sensing applications, ranging from refractive index sensing to spectroscopic sensing. In this paper the prospect of silicon photonics for absorption, fluorescence and Raman spectroscopy on-a-chip will be discussed. To allow spectroscopy in the visible and near infrared the silicon photonics platform is extended with silicon nitride waveguides.
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