Dr. Ashwin Krishnan Rishinaramangalam Profile

Dr. Ashwin Krishnan Rishinaramangalam

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Publications (5)

Proceedings Article | 2 March 2020 Presentation + Paper

High brightness MOCVD-grown laser diodes using RPCVD tunnel junctions

Qian Gao, Marie Wintrebert-Fouquet, Alanna Fernandes, Patrick Chen, Ian Mann, Daniel Feezell, Mahmoud Behzadirad, Josh Brown, Satya Barik, Ashwin Rishinaramangalam, Brad Siskavich

Proceedings Volume 11262, 112620R (2020) https://doi.org/10.1117/12.2548261

KEYWORDS: Cladding, Doping, Resistance, Light emitting diodes, Magnesium, Gallium nitride, Absorption, Semiconductor lasers, Silicon, Refractive index

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Proceedings Article | 14 March 2018 Presentation

Fabrication of InGaN LEDs on flexible metal foils (Conference Presentation)

Ashwin Rishinaramangalam, Daniel Feezell, Vladimir Matias, Christopher Sheehan, Daniel Koleske, Brendan Gunning

Proceedings Volume 10554, 1055406 (2018) https://doi.org/10.1117/12.2294597

KEYWORDS: Light emitting diodes, Metals, Indium gallium nitride, Gallium nitride, Sapphire, Ion beams, Deposition processes, Epitaxy, Silicon, Patterned sapphire substrate

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Proceedings Article | 3 November 2016 Presentation

GaN nanowire tip for high aspect ratio nano-scale AFM metrology (Conference Presentation)

Mahmoud Behzadirad, Tito Busani, Noel Dawson, Mohsen Nami, Ashwin Rishinaramangalam, Daniel Feezell

Proceedings Volume 9927, 99270N (2016) https://doi.org/10.1117/12.2237892

KEYWORDS: Gallium nitride, Silicon, Metrology, Metalorganic chemical vapor deposition, Nanoparticles, Atomic force microscopy, Silicon carbide, Gold, Carbon, Nanowires

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Proceedings Article | 26 August 2015 Presentation + Paper

Ordered arrays of bottom-up III-nitride core-shell nanostructures

Daniel Feezell, Rhett Eller, Michael Fairchild, Darryl Shima, Ganesh Balakrishnan, S. R. Brueck, Benjamin Bryant, Mohsen Nami, Ashwin Rishinaramangalam

Proceedings Volume 9553, 955308 (2015) https://doi.org/10.1117/12.2191726

KEYWORDS: Gallium nitride, Nanostructures, Light emitting diodes, Metalorganic chemical vapor deposition, Quantum wells, Scanning electron microscopy, Crystals, Gallium, Indium gallium nitride, Nanowires

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Proceedings Article | 3 September 2009 Paper

Electronic transport in nanowires: from injection-limited to space-charge-limited behavior

S. Hersee, J. Cederberg, A. Talin, S. Picraux, X. Wang, E. Toimil-Molares, F. Léonard, A. Rishinaramangalum, B. Swartzentruber, A. Katzenmeyer

Proceedings Volume 7406, 74060G (2009) https://doi.org/10.1117/12.827495

KEYWORDS: Germanium, Semiconductors, Interfaces, Gallium nitride, Nanoparticles, Metals, Bismuth, Scanning electron microscopy, Gold, Nanowires

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