Prof. Asif M. Khan Profile

Prof. Asif M. Khan

Distinguished Professor of Engineering at Univ of South Carolina

SPIE Involvement:

Author

Publications (17)

Proceedings Article | 26 February 2016 Paper

Deep ultraviolet light-emitting and laser diodes

Asif Khan, Fatima Asif, Sakib Muhtadi

Proceedings Volume 9748, 97481J (2016) https://doi.org/10.1117/12.2217738

KEYWORDS: Light emitting diodes, Deep ultraviolet, Lamps, Semiconductor lasers, Sapphire, Aluminum nitride, Superlattices, Doping, External quantum efficiency, Silicon

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Proceedings Article | 3 May 2007 Paper

GaN-based micro chemical sensor nodes for early warning chemical agents

K.-A. Son, B. Yang, N. Prokopuk, J. Moon, A. Liao, M. Gallegos, J. Yang, M. Khan

Proceedings Volume 6556, 655616 (2007) https://doi.org/10.1117/12.721721

KEYWORDS: Sensors, Gallium nitride, Field effect transistors, Chemical fiber sensors, Prototyping, Transmitters, Electrodes, Chemical species, Polarization, Microcontrollers

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Proceedings Article | 8 February 2007 Paper

Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications

Ashok Sood, Yash Puri, Frederick Clarke, Jie Deng, James Hwang, Steven Brierley, M. Asif Khan, Amir Dabiran, Peter Chow, Oleg Laboutin, Roger Welser

Proceedings Volume 6473, 647318 (2007) https://doi.org/10.1117/12.704201

KEYWORDS: Field effect transistors, Semiconducting wafers, Silicon carbide, Metalorganic chemical vapor deposition, Gallium nitride, Aluminum, Reflectivity, Defense technologies, Wafer-level optics, Gallium

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Proceedings Article | 22 February 2006 Paper

Reliability of AlGaN-based deep UV LEDs on sapphire

Maxim Shatalov, Zheng Gong, Mikhail Gaevski, Shuai Wu, Wenhong Sun, Vinod Adivarahan, M. Asif Khan

Proceedings Volume 6134, 61340P (2006) https://doi.org/10.1117/12.647204

KEYWORDS: Light emitting diodes, Deep ultraviolet, Reliability, Sapphire, Gallium, Aluminum, Stereolithography, Metals, Aluminum nitride, Cladding

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Proceedings Article | 20 October 2004 Paper

Deep-ultraviolet LEDs fabricated in AlInGaN using MEMOCVD

Muhammad Khan

Proceedings Volume 5530, (2004) https://doi.org/10.1117/12.567108

KEYWORDS: Light emitting diodes, Deep ultraviolet, Resistance, External quantum efficiency, Aluminum, Gallium, Aluminum nitride, Quantum wells, Sapphire, Ultraviolet light emitting diodes

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Proceedings Article | 3 July 2003 Paper

III-N multiple quantum wells based 285- to 340-nm deep-ultraviolet light-emitting diodes over sapphire

Mohamed Khan

Proceedings Volume 4996, (2003) https://doi.org/10.1117/12.479775

KEYWORDS: Light emitting diodes, Deep ultraviolet, Sapphire, Gallium, Quantum wells, Ultraviolet light emitting diodes, Resistance, Aluminum, Electrons, Ultraviolet radiation

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Proceedings Article | 12 May 2003 Paper

Generation-recombination noise in GaN and GaN-based devices

Nezih Pala, Sergey Rumyantsev, Michael Shur, Michael Levinshtein, M. Asif Khan, Grigory Simin, Remis Gaska

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.488468

KEYWORDS: Gallium nitride, Field effect transistors, Heterojunctions, Thin films, Gallium, Aluminum, Diodes, Temperature metrology, Silicon, Photodetectors

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Proceedings Article | 26 November 2002 Paper

Progress in III-nitride-based white light sources

Remis Gaska, Arturas Zukauskas, Michael Shur, Mohamed Khan

Proceedings Volume 4776, (2002) https://doi.org/10.1117/12.457167

KEYWORDS: Light emitting diodes, Lamps, Aluminum, Indium, Luminous efficiency, Gallium nitride, Luminous efficacy, Ultraviolet radiation, Ultraviolet light emitting diodes, Metalorganic chemical vapor deposition

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Proceedings Article | 6 November 2001 Paper

GaN-based acousto-optic devices for blue optoelectronics

Daumantas Ciplys, Remis Gaska, Michael Shur, Romualdas Rimeika, Jinwei Yang, Mohamed Khan

Proceedings Volume 4453, (2001) https://doi.org/10.1117/12.447655

KEYWORDS: Acoustics, Gallium nitride, Diffraction, Acousto-optics, Waveguides, Refractive index, Sapphire, Transducers, Wave propagation, Integrated optics

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Proceedings Article | 8 March 2001 Paper

Shaping of the band gap in AlInGaN alloys

Gintautas Tamulaitis, Saulius Jursenas, K. Kazlauskas, Arturas Zukauskas, Mohamed Khan, Jinwei Yang, Grigory Simin, Remis Gaska, Michael Shur

Proceedings Volume 4318, (2001) https://doi.org/10.1117/12.417586

KEYWORDS: Luminescence, Indium, Aluminum, Heterojunctions, Quantum wells, Reflectivity, Excitons

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Proceedings Article | 19 August 1998 Paper

Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

Dai Lun, Bei-Wei Zhang, Robin Mair, Kecai Zeng, Jing Lin, Hongxing Jiang, Andrei Botchkarev, W. Kim, Hadis Morkoc, Muhammad Khan

Proceedings Volume 3547, (1998) https://doi.org/10.1117/12.319607

KEYWORDS: Picosecond phenomena, Optical properties, Quantum wells, Luminescence, Bessel functions, Excitons, Time resolved spectroscopy, Spectroscopy, Physics

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Proceedings Article | 22 January 1997 Paper

Recent progress in AlGaN/GaN-based optoelectronic devices

Mohamed Khan, Michael Shur

Proceedings Volume 3006, (1997) https://doi.org/10.1117/12.264214

KEYWORDS: Gallium nitride, Spinel, Light emitting diodes, Optoelectronic devices, Sapphire, Quantum wells, Indium gallium nitride, Green light emitting diodes, Luminescence, Optoelectronics

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Proceedings Article | 24 April 1995 Paper

Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices

Mohamed Khan, Q. Chen, C. Sun, Michael Shur, M. MacMillan, Robert Devaty, W. Choyke

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206878

KEYWORDS: Gallium nitride, Indium gallium nitride, Superlattices, Light emitting diodes, Heterojunctions, Sensors, Reflectors, Optical pumping, Silicon, Optoelectronic devices

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Proceedings Article | 24 April 1995 Paper

Optoelectronic GaN-based field effect transistors

Michael Shur, Mohamed Khan

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206879

KEYWORDS: Field effect transistors, Photodetectors, Resistance, Optoelectronics, Gallium nitride, Heterojunctions, Interfaces, Solids, Dielectrics, Optoelectronic devices

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Proceedings Article | 2 May 1994 Paper

Photoconductive and photovoltaic ultraviolet sensors based on GaN

Mohamed Khan, D. Olson, Amal Bhattarai, Jonathon Kuznia, S. Krishnankutty

Proceedings Volume 2149, (1994) https://doi.org/10.1117/12.175263

KEYWORDS: Sensors, Gallium nitride, Ultraviolet detectors, Neodymium, Photovoltaics, Ultraviolet radiation, Magnesium, Metalorganic chemical vapor deposition, Doping, Measurement devices

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Proceedings Article | 10 December 1992 Paper

Studies of high temperature superconductors as radiation detectors

A. Qiu, Amal Bhattarai, E. Dahlberg, Mohamed Khan, Katerina Moloni, James Van Hove

Proceedings Volume 1735, (1992) https://doi.org/10.1117/12.138637

KEYWORDS: Superconductors, Sensors

Proceedings Article | 1 March 1991 Paper

Integrated optics intensity modulators in the GaAs/AlGaAs system

Mohamed Khan, Ahmed Naumaan, James Van Hove

Proceedings Volume 1396, (1991) https://doi.org/10.1117/12.47742

KEYWORDS: Waveguides, Integrated optics, Modulators, Planar waveguides, Channel waveguides, Optical engineering, Reactive ion etching, Gallium arsenide, Electrodes, Diodes

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Showing 5 of 17 publications

Conference Committee Involvement (14)

Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems

9 August 2017 | San Diego, California, United States

Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems

31 August 2016 | San Diego, California, United States

Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems

12 August 2015 | San Diego, California, United States

Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems

20 August 2014 | San Diego, California, United States

LED-based Illumination Systems

26 August 2013 | San Diego, California, United States

Showing 5 of 14 Conference Committees

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